Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100
Typical Bias Configuration
Rbias
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
100 mA
2,3
Power Dissipation
650 mW
RF Input Power
+13 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +200°C
Thermal Resistance:
θ
jms
= 60°C/W
1. Exceeding these limits may cause permanent damage.
2. Mounting Surface Temperature (TMS)= 25
°C.
3. Derate at 16.7 mW/°C for TMS > 161°C
Id =
Vcc - Vd
Rbias
Vcc > 7.5 V
RFC (Optional)
4
C (DC Block)
IN
1
MP4TD1100
C (DC Block)
3
OUT
Vd = 5.5 V
2
Typical Performance Curves @ Id = 60 mA, TA = +25°C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
RETURN LOSS (dB)
12 0
Id, DEVICE CURRENT (mA)
10 0
80
60
40
20
0
0
-6
-8
-10
-12
-14
-16
-18
-20
RETURN LOSS vs FREQUENCY
IN P U T
OUTPUT
2
4
V d, D E VI C E V O L T AG E (V)
6
8
0.1
1
F R E QU E N C Y (G H z)
10
14
12
10
GAIN (dB)
8
6
4
2
0
POWER GAIN vs CURRENT
23
0 .1 G H z
0.5 G H z
P
OUT
- 1dB (dBm)
1 .0 G H z
21
19
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
I d= 7 5m A
Id= 6 0m A
17
15
13
11
2 .0 G H z
I d= 40 m A
20
40
60
Id, D E V IC E C U R R E N T (m A)
80
10 0
0. 1
1
F R E Q U E N C Y (G H z)
10
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
2
FX (408) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
