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MP4TD1110 参数 Datasheet PDF下载

MP4TD1110图片预览
型号: MP4TD1110
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 47 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
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Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1110
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
90 mA
Power Dissipation
2,3
560 mW
RF Input Power
+20 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +200°C
Thermal Resistance:
θ
jc
= 135°C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
°C.
3. Derate at 7.4 mW/°C for Tc > 124°C.
IN
C (DC Block)
Typical Bias Configuration
Rbias
Vcc > 7.5 V
Vcc - Vd
Id =
Rbias
RFC (Optional)
4
C (DC Block)
3
MP4TD1110
1
Vd = 5.5 V
OUT
2
Typical Performance Curves @ Id = 60 mA, TA = +25°C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
100
Id, DEVICE CURRENT (mA)
0
-2
80
RETURN LOSS (dB)
-4
-6
-8
-1 0
-1 2
-1 4
-1 6
-1 8
0
0
1
2
3
4
5
6
V d, D E V IC E V O L T A G E (V )
-2 0
0 .1
1
F R E Q U E N C Y (G H z)
10
IN P U T
O U TPU T
RETURN LOSS vs FREQUENCY
60
40
20
POWER GAIN vs CURRENT
14
13
12
11
GAIN (dB)
10
9
8
7
6
5
4
0
20
40
60
80
100
Id, D E VIC E C U R R E N T (m A )
10
f= 2 .0 G H z
f= 1 .0 G H z
f= 0 .1 G H z
f= 0 .5 G H z
P
OUT
- 1dB (dBm)
20
18
16
14
12
22
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
Id= 7 5 m A
Id= 6 0 m A
0 .1
1
F R E Q U E N C Y (G H z)
10
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
2
FX (408) 432-3440