Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0300
Typical Bias Configuration
Rbias
Vcc > 7 V
Id =
Vcc - Vd
Rbias
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
80 mA
2,3
Power Dissipation
425 mW
RF Input Power
+13 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +150°C
Thermal Resistance:
θ
jms
= 150°C/W
1. Exceeding these limits may cause permanent damage.
2. Mounting Surface Temperature (TMS)= 25
°C.
3. Derate at 22.2 mW/°C for TMS > 181°C
RFC (Optional)
4
C (DC Block)
IN
1
MP4TD0300
C (DC Block)
3
OUT
Vd = 5.0 V
2
Typical Performance Curves @ Id = 35 mA, TA = +25°C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
RETURN LOSS vs FREQUENCY
60
Id, DEVICE CURRENT (mA)
50
40
30
20
10
0
-5
-7
RETURN LOSS (dB)
-9
-11
-13
-15
-17
-19
-21
Input
O utput
0
1
2
3
4
5
6
0.1
1
F RE Q UE N CY (GH z)
10
Vd, DE VIC E VO L T AGE (V)
14
13
12
GAIN (dB)
11
10
9
8
7
6
POWER GAIN vs CURRENT
0.1 GH z
0.5 G H z
P
OUT
- 1 dB ( dBm)
1.0 GH z
16
14
12
10
8
6
4
2
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
Id=50m A
Id=35m A
2.0 GH z
10
20
30
40
Id, DE VIC E C UR RE N T (m A)
50
60
0
0.01
0.1
FR E QU E NC Y (GH z)
1
10
Specification Subject to Change Without Notice
M-Pulse Microwave
2
__________________________________________________________________________________
North America: Tel. (408) 432-1480
Fax (408) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
