Moderate Power High fT NPN Silicon Transistor
Typical Performance Curves
MP4T856 SERIES POWER DISSIPATION
1400
POWER DISSIPATION (mW)
1200
1000
800
600
400
200
0
0
MP4T85635 (MICRO-X)
FREE AIR
MP4T85635 (MICRO-X)
INFINITE HEAT SINK
MP4T86500 (CHIP)
ON HEAT SINK
300
250
MP4T856 Series
MP4T856 SERIES POWER DISSIPATION
M P 4 T 8 5 6 3 3 , 39 (O D S - 1 1 3 9 , 23 M icro-X )
INFINITE HEAT SINK
POWER DISSIPATION (mW)
200
150
100
50
M P 4 T 8 5 6 3 3 , 3 9 ( O D S - 1 1 3 9 , 3 5 M icro-X )
F R E E A IR
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (C)
A M B IE N T T E M P E R A T U R E (C )
MP4T85635
NOMINAL GAIN vs FREQUENCY
at VCE - 8 VOLTS and IC = 20mA
30
25
GAIN (dB)
20
15
10
5
0
100
1000
FREQUENCY (MHz)
10000
|S
21E
|
2
5
0
MAG
GTU (MAX)
GAIN (dB)
30
25
20
15
10
MP4T85635
NOMINAL GAIN vs FREQUENCY
at VCE - 8 VOLTS and IC = 40mA
GU (MAX)
GA (MAX)
|S
21E
|
2
100
1000
FREQUENCY (MHz)
10000
MP4T85635
NOMINAL GAIN vs COLLECTOR CURRENT
at F = 1GHz and VCE = 8 VOLTS
18
17
16
15
GAIN (dB)
14
13
12
11
10
9
8
1
10
COLLECTOR CURRENT (mA)
100
GTU (MAX)
|S
21E
|
2
25
MAG
GAIN (dB)
20
15
10
5
0
1
MP4T85600
NOMINAL GAIN vs COLLECTOR CURRENT
at F = 1GHz and VCE = 8 VOLTS
GU (MAX)
|S
21E
|
2
10
COLLECTOR CURRENT (mA)
100
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
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6
Tel (408) 432-1480
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MPLUSE [ M-PULSE MICROWAVE INC. ]
