Moderate Power High fT
NPN Silicon Transistor
Features
•High
Output Power
- 16 dBm P1dB @ 1 GHz
- 10 dBm P1dB @ 2 GHz
•High
Gain Bandwidth Product
•8-9
GHz fT
•High
Power Gain
- |S21E|
2
= 15 dB @ 1 GHz
- |S21E|
2
= 9 dB @ 2 GHz
•Low
Noise Figure
- 1.5 dB @ 1.5 GHz
Description
The MP4T856 series of moderate power NPN
transistors prov ides low noise at 5-10 v olts operating
v oltage. These transistors are designed to optimize
gain at moderate collector currents (20 - 60 mA).
They are useful as moderate power (+23-24 dBm) low
noise amplifiers at 0.5-2 GHz or as low noise VCO
transistors from 100 MHz to 5.0 GHz.
These inexpensiv e transistors are av ailable in the SOT-
23 (MP4T85633), the SOT-143 (MP4T85639), and the
Micro-X (MP4T85635) packages.
They are also
av ailable as chips (MP4T85600) for hybrid circuits. The
plastic packages SOT-23 and SOT-143 are normally
supplied on tape and reel.
Package Outline
MP4T856 Series
SOT-23
SOT-143
Chip
Absolute Maximum Ratings
1
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Chip or Ceramic Package
Plastic Package
Storage Temperature
Chip or Ceramic Package
Plastic Package
Power Dissipation (die)
1. See power derating curves.
Absolute Maximum
20 V
12 V
3.0 V
100 mA
+200°C
+150°C
-65°C to +200°C
-65°C to +200°C
1200 mW
1
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
