8 Volt, Mediam Power Transistor
Electrical Specifications at 25°C
Symbol
fT
P out
Parameters
Gain Bandwidth
Product
Power Output
Class C
Test
Conditions
V
CE
= 8V
I
C
= 100
mA
V
CE
= 8V
I
C
= 220
mA
f = .9 GHz
Units
GHz
W
.5 typ.
.5 typ.
MP4T80100
Chip
6 typ.
MP4T801510
200mil BEO
4 Typ
MP4T801 Series
Maximum Ratings at 25°C
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Chips or Ceramic Packages
Plastic Packages
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
j
T
STG
P
D
Maximum Rating
25 V
12 V
1.5 V
300 mA
200°C
-65°C to +200°C
-65°C to +125°C
3.6W
Electrical Specifications at 25°C
Parameters
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Conditions
V
CB
= 8 V
I
E
= 0
V
EB
= 1 V
I
C
= 0
V
CE
= 8 V
I
C
= 100 mA
Symbol
I
CBO
I
EBO
h
FE
Min.
20
Typ.
100
Max.
100
1
200
Units
nA
µA
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avenue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
