3 Volt, General Purpose Low Noise High fT Silicon Transistor
MP4T6325 Series
Electrical Specifications at 25°C
Symbol
fT
|S
21E
|
2
Parameters
Gain Bandwidth
Product
Insertion Power
Gain
Noise Figure
Unilateral Gain
NF
GTU (max)
MAG
P
1dB
R
TH (J-A)
R
TH (J-C)
1.
Maximum
Available Gain
Power Out at 1dB
Compression
Thermal
Resistance
Thermal
Resistance
Test
Conditions
V
CE
= 3V
I
C
= 10 mA
V
CE
= 3V
I
C
= 10 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3V
I
C
= 2 mA
f = 1 GHz
V
CE
= 3V
I
C
= 10 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3V
I
C
= 10 mA
f = 2 GHz
V
CE
= 3V
I
C
= 15 mA
f = 900MHz
Junction/
Ambient
Junction/
Case
Units
GHz
dB
MP4T632500
Chip
11 typ.
MP4T632533
SOT-23
10 typ.
MP4T632535
Micro-X
11 typ.
MP4T632539
SOT-143
11 typ.
12 typ.
8 typ.
dB
1.5 typ.
dB
14.5 typ.
9 typ.
dB
10 typ.
dBm
°C/W
°C/W
8 typ.
70 max.
1
11 typ.
7 typ.
1.6 typ.
13 typ.
8 typ.
9 typ.
8 typ.
650 typ.
200 typ.
12 typ.
8 typ.
1.5 typ.
14.5 typ.
9 typ.
10 typ.
8 typ.
500 typ.
200 typ.
11 typ.
7 typ.
1.6 typ.
13 typ.
8 typ.
9 typ.
8 typ.
625 typ.
200 typ.
Junction/Heat Sink R
TH
(J-C)
Maximum Ratings at 25°C
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Chips or Ceramic Packages
Plastic Packages
Power Dissiapation
1.
See Typical Performance Curves for power derating.
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
j
T
STG
P
D
Maximum Rating
8V
6V
1.5 V
25 mA
200°C
-65°C to +200°C
-65°C to +125°C
150mW
1
Electrical Specifications at 25°C
Parameters
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Collector Base
Junction Capacitance
Conditions
V
CB
= 5 V
I
E
= 0
V
EB
= 1 V
I
C
= 0
V
CE
= 3 V
I
C
= 3 mA
V
CB
= 3 V
I
E
= 0
f = 1 MHz
Symbol
I
CBO
I
EBO
h
FE
C
OB
Min.
20
Typ.
90
0.52
Max.
100
1
200
0.70
Units
nA
µA
pF
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
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576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440