Silicon Bipolar High fT Low Noise Microwave Transistors
Typical Performance Curves (Cont’
d)
NOMINAL OUTPUT POWER at the 1dB
COMPRESSION POINT vs COLLECTOR CURRENT
at f = 1 and 4 GHz, V
CE
= 8 VOLTS (MP4T64535)
24
22
POWER OUT @ 1 dB
COMPRESSION (dBm)
20
18
16
14
12
10
8
6
0
10
20
COLLECTOR CURRENT (mA)
30
40
P
1dB
at 4 GHz
P
1dB
at 1 GHz
MP4T645 Series
Case Styles
MP4T64533
MP4T64533
SOT-23
F
D
Collector
M
G
B
K
A
N
L
H
Base
J
Emitter
C
E
DIM.
A
B
C
D
E
F
G
H
J
K
L
DIM.
M
N
INCHES
MIN.
MAX.
0.044
0.004
0.040
0.013
0.020
0.003
0.006
0.110
0.119
0.047
0.056
0.037 typical
0.075 typical
0.103
0.024
GRADIENT
10°max.
1
2°. . . 30°
MILLIMETERS
MIN.
MAX.
1.12
0.10
1.00
0.35
0.50
0.08
0.15
2.80
3.00
1.20
1.40
0.95 typical
1.90 typical
2.60
0.60
NOTE:
1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
7
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
