3 Volt, General Purpose Low Noise High fT Silicon Transistor
Typical Performance Curves (MP4T632535)
POWER DERATING CURVES
160
POWER DISSIPATION (mW)
MP4T6325 Series
NOISE FIGURE and ASSOCIATED GAIN at
VCE = 3 V, 1 GHz vs COLLECTOR CURRENT
10
9
8
7
6
5
4
3
2
1
0
1
NF
(O P T)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
A M B I E N T T E M P E R A T U R E (C )
M P4T632533, 39
(S O T -2 3 , 1 4 3 ) F R E E A I R
M P 4 T 6 3 2 5 3 5 (M IC R O -X )
M P4T 63250 0 (C H IP )
O N I N F IN I T E H E A T S I N K
ASSOCIATED GAIN (dB)
140
NOISE FIGURE (dB)
AS SO C I AT E D G AI N
N O IS E F IG U R E (50 O hm s )
10
C O L L E C T O R C U R R E N T (m A)
10 0
GAIN vs FREQUENCY at VCE=3 V and IC =
10 mA
16
COLL.-BASE CAPACITANCE (pF)
COLLECTOR-BASE CAPACITANCE (C
OB
)
vs COLLECTOR-BASE VOLTAGE
0.65
0 .6
0.55
0 .5
0.45
0 .4
1
C O L L E C T O R -B ASE VO L T AG E (Vo lts)
10
14
12
GAIN (dB)
10
8
6
4
2
0
1
F R E Q U E N C Y (G H z)
10
|S
2 1E
|
2
G T U (M AX )
GAIN BANDWIDTH PRODUCT (fT ) vs
COLLECTOR CURRENT at VCE=3 V
12
GAIN BANDWIDTH (GHz)
10
8
6
4
2
2
0
1
10
C O L L E C T O R C U R RE N T (m A)
100
0
1
GAIN (dB)
12
10
8
6
4
GAIN vs COLLECTOR CURRENT at 2 GHz,
VCE=3 V
M AG
G T U (M AX )
|S
2 1 E
|
2
10
C O L L E C T O R C U R R E N T (m A)
10 0
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
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576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
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MPLUSE [ M-PULSE MICROWAVE INC. ]
