Bipolar High fT Low Voltage NPN Silicon Transistors
Maximum Ratings
MP4T324300
Parameter
Collector-Base Voltage
1
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
1
Junction Temperature
Storage Temperature
Power Dissipation
1,3
Operating Temperature
1.
2.
3.
2
1
1
MP4T3243 Series
V4.00
MP4T324333
SOT-23
8
6
1.5
110
125
-65 to +125°
C
250
125
MP4T324335
Micro-X
8
6
1.5
110
200
-65 to +175°
C
400
150
Symbol
V
CBO
V
CE
V
EB
I
C
T
j
T
STG
P
T
T
CP
Unit
Volts
Volts
Volts
mA
°
C
°
C
mW
°
C
Chip
8
6
1.5
110
200
-65 to +175°
C
600
150
At 25° case temperature (packaged transistors) or 25° mounting surface temperature (chip transistors).
C
C
Case or bonding surface temperature. Derate maximum power dissipation rating linearly to zero watts at maximum operating temperature.
The thermal resistance of the MP4T324300 junction/case is 50°
C/watt nominal.
Electrical Specifications @ +25°
C
MP4T324300
Parameter
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 3 volts
I
C
= 50 mA
V
CE
= 3 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
Noise Figure
V
CE
= 3 volts
I
C
= 10 mA
f = 1 GHz
Unilateral Gain
V
CE
= 3 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
Maximum Available Gain
V
CE
= 3 volts
I
C
= 40 mA
f = 2 GHz
Power Out at 1 dB
Compression
V
CE
= 3 volts
I
C
= 50 mA
f = 2 GHz
f = 3 GHz
20 typ
15 typ
19 typ
15 typ
20 typ
15 typ
P
1dB
dBm
8.5 typ
7 typ
8.5 typ
MAG
dB
10 typ
6 typ
9 typ
4 typ
10 typ
6 typ
GTU (max)
dB
2.2 max
2.4 max
2.2 max
NF
dB
7 min
3 typ
6 min
2.5 typ
7 min
3 typ
|S
21E
|
2
dB
Symbol
f
T
Units
GHz
Chip
6 typ
MP4T324333
SOT-23
6 typ
MP4T324335
Micro-X
6 typ
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
