Silicon Bipolar High f
T
Low Noise
Medium Power 12 Volt Transistors
Features
•Low
Phase Noise Oscillator Transistor
•200
mW Driv er Amplifier Transistor
•Operation
to 8 GHz
•Av
ailable as Chip
•Av
ailable in Hermetic Surface Mount Packages
Description
The MP4T24300 series of high f
T
NPN medium power
bipolar transistors are designed for usage in oscillators
to 8 GHz and for moderate power driv er amplifiers
through 3 GHz with noise figure below 4 dB.
This industry standard transistor is av ailable as a chip
for hybrid oscillator circuits or in hermetic ceramic
packages for military usage. The chip and hermetic
packages may be screened to JANTXV equiv alent
lev els.
The MP4T243 transistors utilize sub-micron photolithog-
raphy and locos oxidation techniques to minimize para-
sitic capacitances. It also reduces shot noise enabling
improv ed low noise characteristics. These transistors
use a high temperature refractory barrier/gold
metalization process. The MP4T243 transistor is emitter
ballasted using ion implanted polysilicon resistors to
prev ent emitter current hot spots at high current
operation.
MP4T243 Series
V3.00
Case Styles
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
