Silicon Bipolar High fT Low Noise Microwave Transistors
Absolute Maximum Ratings
MP42141 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
Total Power Dissipation at 25°C
509 Case Style
510 Case Style
35 Case Style
400 mW
700 mW
700 mW
V
CBO
V
CEO
V
EBO
I
C
T
j
27 V
20 V
1.5 V
50 mA
200°C
-65°C to +200°C
-65°C to +125°C
MP42141 Series
Electrical Specifications @ 25°C
MP42141 Series
Parameter of Test
Gain Bandwidth Product
Condition
V
CE
= 10 volts
Fm =1.0 GHz
Ic = 15 mA
V
CE
= 15 volts
I
C
= 15 mA
f = 1 GHz
f = 2 GHz
V
CE
= 10 volts
I
C
= 5 mA
f = 1 GHz
f = 2 GHz
V
CE
= 10 volts
I
C
= 15 mA
f = 1 GHz
V
CE
= 10 volts
I
C
= 10 mA
f = 1 GHz
Symbol
f
T
Units
GHz
MP4214100
Chip
4.1 typ
MP4214135
Micro-X
-----
MP42141-509
TO-72
-----
Insertion Power Gain
|S
21E
|
2
dB
13 typ
7 typ
13 typ
7 min
11 typ
5 typ
Noise Figure
NF
dB
2.0 typ
3.4 typ
2.0 typ
3.4 typ
2.3 typ
3.6 typ
Unilateral Gain
GTU (max)
dB
17 typ
17 typ
14 typ
Power Out at 1 dB
Compression
Z=OPT
P
1dB
dBm
N/A
+7 typ
+4 typ
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
