Silicon Bipolar High fT Low Noise Microwave Transistors
Absolute Maximum Ratings
MP42001 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
Total Power Dissipation at 25°C
509 Case Style
510 Case Style
35 Case Style
450 mW
1.2 W
750 mW
V
CBO
V
CEO
V
EBO
I
C
T
j
20 V
15 V
1.5 V
125 mA
200°C
-65°C to +200°C
-65°C to +125°C
MP42001 Series
Electrical Specifications @ 25°C
MP42001 Series
Parameter of Test
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 10 volts
I
C
= 35 mA
V
CE
= 10 volts
I
C
= 28 mA
f = 100 MHz
f = 450 MHz
V
CE
= 10 volts
I
C
= 5 mA
f = 60 MHz
f = 450 GHz
V
CE
= 10 volts
I
C
= 5 mA
f = 60 MHz
V
CE
= 10 volts
I
C
= 10 mA
f = 60 MHz
f = 450 MHz
Symbol
f
T
|S
21E
|
2
Units
GHz
dB
30 typ
16 typ
NF
dB
1.2 typ
1.7 typ
GTU (max)
dB
30 typ
P
1dB
dBm
N/A
N/A
+5 typ
+2 typ
+7 typ
+4 typ
28 typ
28 typ
1.4 typ
1.9 typ
1.5 typ
2.3 typ
29 typ
14 min
26 typ
12 min
MP4200100
Chip
2.3 typ
MP4200135
Micro-X
1.5 typ
MP42001-509
TO-72
1.5 typ
Noise Figure
Unilateral Gain
Power Out at 1 dB
Compression
Z=50 Ohms
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
