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MA4TD0410T 参数 Datasheet PDF下载

MA4TD0410T图片预览
型号: MA4TD0410T
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 46 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
 浏览型号MA4TD0410T的Datasheet PDF文件第1页浏览型号MA4TD0410T的Datasheet PDF文件第3页  
Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0410
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
100 mA
2,3
Power Dissipation
650 mW
RF Input Power
+13 dBm
Junction Temperature
150°C
Storage Temperature
-65°C to +200°C
Thermal Resistance:
θ
jc
= 140
°C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
°C.
3. Derate at 7.1 mW/°C for Tc > 109°C.
C (DC Block)
IN
Typical Bias Configuration
Rbias
Vcc > 7 V
Vcc - Vd
Id =
Rbias
RFC (Optional)
4
C (DC Block)
3
MP4TD0410
1
Vd = 5.25 V
OUT
2
Typical Performance Curves @ Id = 50 mA, TA = +25°C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
80
Id, DEVICE CURRENT (mA)
70
RETURN LOSS (dB)
60
50
40
30
20
10
0
0
1
2
3
4
5
6
V d, D E V IC E V O L T A G E (V )
0
-5
-1 0
-1 5
RETURN LOSS vs FREQUENCY
Input
O utput
-2 0
-2 5
-3 0
0 .1
1
F R E Q U E N C Y (G H z)
10
POWER GAIN vs CURRENT
10
f= .1 G H z
9
8
P
OUT
-1dB (dBm)
f= 2 .0 G H z
GAIN (dB)
7
6
5
4
3
2
20
30
40
50
60
70
80
Id, D E V IC E C U R R E N T (m A )
f= 1 .0 G H z
18
16
14
12
10
8
6
4
2
0
P
OUT
@ 1DB GAIN COMPRESSION
vs FREQUENCY
Id= 7 0 m A
Id= 5 0 m A
Id= 3 0 m A
0 .1
1
F R E Q U E N C Y (G H z)
10
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
2
FX (408) 432-3440