Bipolar Low Noise Transistors
Absolute Maximum Ratings
2N2857 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
Total Power Dissipation at 25°C
509 Case Style
450 mW
V
CBO
V
CEO
V
EBO
I
C
T
j
30 V
15 V
1.5 V
50 mA
200°C
-65°C to +200°C
-65°C to +125°C
2N2857
Electrical Specifications @ 25°C
2N2857 Series
Parameter of Test
Gain Bandwidth Product
Small Signal Power Gain
Condition
V
CE
= 10 volts
I
C
= 8 mA
V
CE
= 6 volts
I
C
= 1.5 mA
f = 450 MHz
V
CE
= 6 volts
I
C
= 1.5 mA
f = 450 GHz
V
CE
= 6 volts
I
C
= 5 mA
f = 100 MHz
V
CE
= 6 volts
I
C
= 2 mA
f = 1 KHz
V
CE
= 6 volts
Symbol
f
T
GPE
Units
GHz
dB
12.5 – 21.0
NF
dB
4.5 Max.
|hfe|
10 - 19
hfe
50 - 220
C
CB
pf
1.0 Max.
2N2857
509 pkg
1.8 typ
Noise Figure
50 Ohms
Magnitude of small
Signal short-circuit
Transfer ratio
Low frequency small
Signal current transfer
ratio
Collector to base
Feedback capacitance
Collector base time
constant
V
CE
= 6 volts
I
C
= 2 mA
f = 1 KHz
rb’ Cc
psec
4 - 15
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
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