MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MSD6150/D
Dual Diode
Common Anode
MSD6150
3 Anode
1
2
3
CASE 29–04, STYLE 4
TO–92 (TO–226AA)
Cathode 1
2 Cathode
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Peak Forward Recurrent Current
Peak Forward Surge Current
(Pulse Width = 10
µsec)
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VR
IF
IFM(surge)
PD(1)
TJ, Tstg(1)
Value
70
200
500
625
5.0
– 55 to +135
Unit
Vdc
mAdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Breakdown Voltage
(I(BR) = 100
µAdc)
Reverse Current
(VR = 50 Vdc)
Forward Voltage
(IF = 10 mAdc)
Capacitance
(VR = 0)
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
Symbol
V(BR)
IR
VF
C
trr
Min
70
—
—
—
—
Typ
—
—
0.80
5.0
—
Max
—
0.1
1.0
8.0
100
Unit
Vdc
µAdc
Vdc
pF
ns
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 8.0 mW/°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, Tstg = –55 to +150°C,
θJC
= 12.5°C/W,
θJA
= 125°C.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
MOTOROLA [ MOTOROLA, INC ]
