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SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for 13.6 volt VHF large–signal class C and class AB linear power
amplifier applications in commercial and industrial equipment.
•
•
High Common Emitter Power Gain
Specified 13.6 V, 160 MHz Performance:
Output Power = 40 Watts
Power Gain = 9.0 dB Min
40 W, 145–175 MHz
RF POWER
TRANSISTORS
NPN SILICON
Efficiency = 55% Min
•
•
•
Load Mismatch Capability at Rated Voltage and RF Drive
Silicon Nitride Passivated
Low Intermodulation Distortion, d = –30 dB Typ
3
MAXIMUM RATINGS
Rating
Symbol
Value
16
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V
CEO
V
CBO
V
EBO
36
4.0
8.0
I
C
Total Device Dissipation @ T = 25°C (1)
Derate above 25°C
P
D
100
0.57
Watts
W/°C
C
CASE 145A–09, STYLE 1
Storage Temperature Range
T
stg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
Max
Unit
R
1.75
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, I = 0)
V
16
36
4.0
—
—
—
—
—
—
—
—
10
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, V = 0)
V
(BR)CES
C
BE
Emitter–Base Breakdown Voltage
(I = 5.0 mAdc, I = 0)
V
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 15 Vdc, I = 0)
I
mAdc
CBO
CB
E
ON CHARACTERISTICS
DC Current Gain
(I = 4.0 Adc, V
C CE
h
10
—
70
90
150
125
—
FE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
C
pF
ob
(V
CB
= 12.5 Vdc, I = 0, f = 1.0 MHz)
E
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF240
1
MOTOROLA [ MOTOROLA ]
