(1)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
(1)
Typ
Characteristic
INPUT LED
Symbol
Min
Max
Unit
Reverse Leakage Current
(V = 3 V)
R
I
—
—
—
0.05
10
2
µA
Volts
pF
R
Forward Voltage
(I = 10 mA)
F
V
1.15
18
F
Capacitance
C
—
(V = 0 V, f = 1 MHz)
R
PHOTODARLINGTON (T = 25°C and I = 0, unless otherwise noted)
A
F
Collector–Emitter Dark Current
I
—
80
5
—
—
—
1
µA
CEO
(V
CE
= 60 V)
Collector–Emitter Breakdown Voltage
(I = 1 mA)
C
V
V
—
—
Volts
Volts
(BR)CEO
(BR)ECO
Emitter–Collector Breakdown Voltage
(I = 100 µA)
E
COUPLED (T = 25°C unless otherwise noted)
A
(2)
(CTR)
Collector Output Current
I
C
mA (%)
(V
CE
= 1.5 V, I = 10 mA)
MOC8030
MOC8050
30 (300)
50 (500)
—
—
—
—
F
(3,4)
Isolation Surge Voltage , 60 Hz Peak ac, 5 Second
V
R
7500
—
—
—
—
Vac(pk)
Ohms
ISO
(3)
11
10
Isolation Resistance
(V = 500 V)
ISO
(3)
Isolation Capacitance
(V = 0 V, f = 1 MHz)
C
—
0.2
—
pF
ISO
SWITCHING
Turn–On Time
Turn–Off Time
Rise Time
t
—
—
—
—
3.5
95
1
—
—
—
—
µs
on
t
off
= 10 V, R = 100 Ω, I = 5 mA
V
CC
L
F
t
r
Fall Time
t
f
2
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I /I x 100%.
C F
3. For this test, LED Pins 1 and 2 are common and Phototransistor Pins 4 and 5 are common.
4. Isolation Surge Voltage, V , is an internal device dielectric breakdown rating.
ISO
5. For test circuit setup and waveforms, refer to Figure 9.
TYPICAL CHARACTERISTICS
2
10
PULSE ONLY
PULSE OR DC
NORMALIZED TO: I = 10 mA
F
1.8
T
= 25°C
A
1
1.6
1.4
1.2
1
T
= –55°C THRU
+25°C
A
0.1
T
= –55
°C
°C
°C
A
+70°C
25
+100°C
100
0.01
1
10
100
1000
0.5
1
2
5
10
20
50
I , LED FORWARD CURRENT (mA)
I , LED INPUT CURRENT (mA)
F
F
Figure 1. LED Forward Voltage versus Forward Current
Figure 2. Output Current versus Input Current
2
Motorola Optoelectronics Device Data