MMBT2907LT1 MMBT2907ALT1
TYPICAL CHARACTERISTICS
3.0
hFE , NORMALIZED CURRENT GAIN
2.0
VCE = –1.0 V
VCE = –10 V
TJ = 125°C
25°C
1.0
0.7
0.5
0.3
0.2
–0.1
– 55°C
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70 –100
–200 –300
–500
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–1.0
–0.8
IC = –1.0 mA
–0.6
–10 mA
–100 mA
–500 mA
–0.4
–0.2
0
–0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0
IB, BASE CURRENT (mA)
–2.0
–3.0
–5.0 –7.0 –10
–20 –30
–50
Figure 4. Collector Saturation Region
300
200
100
70
50
30
20
td @ VBE(off) = 0 V
10
7.0
5.0
3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
IC, COLLECTOR CURRENT
tr
500
VCC = –30 V
IC/IB = 10
TJ = 25°C
t, TIME (ns)
300
200
tf
100
70
50
30
20
2.0 V
–200 –300 –500
10
7.0
5.0
–5.0 –7.0 –10
t′s = ts – 1/8 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t, TIME (ns)
–20 –30
–50 –70 –100
–200 –300 –500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Turn–Off Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MOTOROLA [ MOTOROLA, INC ]
