Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Symbol
MMBR941LT1, T3
MRF947 Series
Unit
Vdc
Vdc
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
10
20
10
20
1.5
1.5
Power Dissipation (1) T = 75°C
P
Dmax
0.25
3.33
0.188
2.5
Watts
mW/°C
C
Derate linearly above T
case
= 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
I
50
150
50
150
mA
°C
C
T
Jmax
T
stg
–55 to +150
300
–55 to +150
400
°C
Thermal Resistance,
Junction to Case
R
°C/W
θJC
DEVICE MARKING
MMBR941LT1 = 7Y
MRF947AT1 = G
MMBR941BLT1 = 7N
MRF947T1, T3 = A
MRF947BT1 = H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (3)
Collector–Emitter Breakdown Voltage
V
V
10
20
—
—
12
23
—
—
—
—
Vdc
Vdc
(BR)CEO
(I = 0.1 mA, I = 0)
All
All
All
All
C
B
Collector–Base Breakdown Voltage
(I = 0.1 mA, I = 0)
(BR)CBO
C
E
Emitter Cutoff Current
(V = 1.0 V, I = 0)
I
0.1
0.1
µAdc
µAdc
EBO
EB
Collector Cutoff Current
(V = 10 V, I = 0)
C
I
CBO
CB
E
ON CHARACTERISTICS (3)
DC Current Gain
h
FE
—
(V
CE
= 6.0 V, I = 5.0 mA) (MMBR941LT1)
C
50
100
—
—
200
200
(MMBR941BLT1)
h
FE
DC Current Gain (V
DC Current Gain
= 1.0 V, I = 500 µA)
MRF947T1, MRF947BT1
50
—
—
—
—
CE
C
1
h
FE
h
FE
h
FE
(V
CE
= 6.0 V, I = 5.0 mA)
MRF947T1, T3
MRF947AT1
MRF947BT1
50
75
100
—
—
—
—
150
200
C
2
3
4
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
C
—
—
0.35
8.0
—
—
pF
cb
T
(V
CB
= 10 V, I = 0, f = 1.0 MHz)
All
All
E
Current Gain — Bandwidth Product
(V = 6.0 V, I = 15 mA, f = 1.0 GHz)
f
GHz
CE
NOTE:
1. To calculate the junction temperature use T = P x R + T
θJC CASE
C
. Case temperature measured on collector lead immediately adjacent to
J
D
body of package.
2. I — Continuous (MTBF ≈ 10 years).
C
3. Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed.
MMBR941 MRF947 SERIES
MOTOROLA RF DEVICE DATA
For More Information On This Product,
2
Go to: www.freescale.com
MOTOROLA [ MOTOROLA ]
