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MC145403DW 参数 Datasheet PDF下载

MC145403DW图片预览
型号: MC145403DW
PDF下载: 下载PDF文件 查看货源
内容描述: 驱动器/接收器 [Drivers/Receivers]
分类和应用: 线路驱动器或接收器驱动程序和接口接口集成电路光电二极管
文件页数/大小: 9 页 / 186 K
品牌: MOTOROLA [ MOTOROLA ]
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DI1 – DIn  
Data Input Pins  
off while the + 5 V is on and the off supply is a low impedance  
to ground, the diode D1 will prevent current flow through the  
internal diode.  
These are the high impedance digital input pins to the driv-  
ers. Input voltage levels on these pins are LSTTL compatible  
and must be between V and GND. A weak pull–up on  
each input sets all unused DI pins to V , causing the corre-  
The diode D2 is used as a voltage clamp, to prevent V  
from drifting positive to V , in the event that power is re-  
CC  
SS  
CC  
moved from V  
SS  
SS  
approximately 3 k, this pin will be pulled to V  
circuitry causing excessive current in the V  
If by design, neither of the above conditions are allowed to  
exist, then the diodes D1 and D2 are not required.  
(Pin 12). If V  
impedance from the V  
power is removed, and the  
SS  
pin to ground is greater than  
CC  
sponding unused driver outputs to be at V  
.
SS  
by internal  
CC  
pin.  
CC  
Tx1 – TXn  
Transmit Data Output Pins  
These are the EIA–232–E transmit signal output pins,  
which swing from V to V . A logic 1 at the DI input causes  
DD  
SS  
ESD PROTECTION  
the corresponding Tx output to swing to V . A logic 0 at the  
SS  
DI input causes the corresponding Tx out to swing to V  
ESD protection on IC devices that have their pins accessi-  
ble to the outside world is essential. High static voltages ap-  
plied to the pins when someone touches them either directly  
or indirectly can cause damage to gate oxides and transistor  
junctions by coupling a portion of the energy from the I/O pin  
to the power supply buses of the IC. This coupling will usually  
occur through the internal ESD protection diodes. The key to  
protecting the IC is to shunt as much of the energy to ground  
as possible before it enters the IC. Figure 4 shows a tech-  
nique which will clamp the ESD voltage at approximately  
± 15 V using the MMBZ15VDLT1. Any residual voltage which  
appears on the supply pins is shunted to ground through the  
capacitors C1 – C3. This scheme has provided protection to  
the interface part up to ± 10 kV, using the human body model  
test.  
.
DD  
The actual levels and slew rate achieved will depend on the  
output loading (R C ).  
L
L
APPLICATION INFORMATION  
POWER SUPPLY CONSIDERATIONS  
Figure 4 shows a technique to guard against excessive de-  
vice current.  
The diode D1 prevents excessive current from flowing  
through an internal diode from the V  
pin to the V  
pin  
CC  
by approximately 0.6 V or greater. This high  
DD  
when V  
< V  
DD  
CC  
current condition can exist for a short period of time during  
power up/down. Additionally, if the + 12 V supply is switched  
+ 12 V  
D1  
MMBZ15VDLT1 x 10  
+ 5 V  
1N4001  
C1  
V
V
CC  
DD  
1
24  
C2  
1N4001  
Rx1  
Tx1  
2
3
23 DO1  
22 DI1  
R
D
Rx2  
Tx2  
4
5
21 DO2  
20 DI2  
R
R
R
R
D
D
Rx3  
Tx3  
Rx4  
Tx4  
6
7
8
9
19 DO3  
18 DI3  
17 DO4  
16 DI4  
15 DO5  
D
Rx5 10  
Tx5 11  
14 DI5  
D
V
12  
13 GND  
SS  
C3  
D2  
1N5818  
– 12 V  
Figure 4.  
MC145403MC145404MC145405MC145408  
MOTOROLA  
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