Order this document
by MBR2060CT/D
SEMICONDUCTOR TECHNICAL DATA
. . . using the Schottky Barrier principle with a platinum barrier metal. These
state–of–the–art devices have the following features:
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•
•
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20 Amps Total (10 Amps Per Diode Leg)
Guard–Ring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 1/8″
Low Power Loss/High Efficiency
High Surge Capacity
MBR2060CT and MBR20100CT
are Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
Low Stored Charge Majority Carrier Conduction
Mechanical Characteristics:
20 AMPERES
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Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
60–100 VOLTS
4
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Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B2060, B2070, B2080, B2090, B20100
1
3
1
2
3
2, 4
CASE 221A–06
TO–220AB
PLASTIC
MAXIMUM RATINGS PER DIODE LEG
Rating
MBR
2060CT 2070CT 2080CT 2090CT 20100CT
60 70 80 90 100
Symbol
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
Volts
RRM
RWM
V
R
Average Rectified Forward Current
I
10
Amps
Amps
Amps
F(AV)
(Rated V ) T = 133°C
R
C
Peak Repetitive Forward Current
I
20
FRM
(Rated V , Square Wave, 20 kHz) T = 133°C
R
C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
I
150
FSM
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz)
Operating Junction Temperature
I
0.5
Amp
°C
RRM
T
J
65 to +150
65 to +175
10,000
Storage Temperature
T
stg
°C
Voltage Rate of Change (Rated V )
R
dv/dt
V/µs
THERMAL CHARACTERISTICS
Maximum Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.0
60
°C/W
SWITCHMODE is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2
Rectifier Device Data
1
Motorola, Inc. 1996
MOTOROLA [ MOTOROLA ]
