欢迎访问ic37.com |
会员登录 免费注册
发布采购

C106 参数 Datasheet PDF下载

C106图片预览
型号: C106
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅4安培RMS 50通600伏 [SCRs 4 AMPERES RMS 50 thru 600 VOLTS]
分类和应用: 可控硅
文件页数/大小: 4 页 / 102 K
品牌: MOTOROLA [ MOTOROLA ]
 浏览型号C106的Datasheet PDF文件第1页浏览型号C106的Datasheet PDF文件第3页浏览型号C106的Datasheet PDF文件第4页  
MAXIMUM RATINGS — continued  
Rating  
Symbol  
Value  
Unit  
Volts  
°C  
Peak Reverse Gate Voltage  
V
GRM  
6
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
–40 to +110  
–40 to +150  
6
T
stg  
°C  
(1)  
Mounting Torque  
in. lb.  
1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower  
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.  
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum  
results, an activated flux (oxide removing) is recommended.  
THERMAL CHARACTERISTICS (T = 25°C, R  
= 1 kunless otherwise noted.)  
C
GK  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
3
Unit  
°C/W  
°C/W  
R
R
θJC  
Thermal Resistance, Junction to Ambient  
75  
θJA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
I , I  
DRM RRM  
Min  
Typ  
Max  
Unit  
Peak Forward or Reverse Blocking Current  
(V  
AK  
= Rated V  
or V  
, R  
RRM GK  
= 1000 Ohms)  
T
J
T
J
= 25°C  
= 110°C  
10  
100  
µA  
µA  
DRM  
Forward “On” Voltage  
(I = 1 A Peak)  
V
2.2  
Volts  
TM  
FM  
Gate Trigger Current (Continuous dc)  
(V = 6 Vdc, R = 100 Ohms)  
I
µA  
GT  
30  
75  
200  
500  
AK  
(V  
L
= 6 Vdc, R = 100 Ohms, T = –40°C)  
AK  
Gate Trigger Voltage (Continuous dc)  
(V = 6 Vdc, R = 100 Ohms, R  
L
C
V
Volts  
GT  
= 1000 Ohms)  
T
T
= 25°C  
0.4  
0.5  
0.2  
0.8  
1
AK GK  
L
J
(V  
R
= Rated V  
, R = 3000 Ohms,  
AK DRM L  
= 1000 Ohms, T = 110°C)  
= –40°C  
GK  
Holding Current  
(V = 12 Vdc, R  
J
J
T
J
T
J
T
J
= 25°C  
= –40°C  
= +110°C  
I
0.3  
0.4  
0.14  
3
6
2
mA  
HX  
= 1000 Ohms)  
GK  
D
Forward Voltage Application Rate  
dv/dt  
8
V/µs  
(T = 110°C, R  
= 1000 Ohms, V = Rated V )  
J
GK  
D
DRM  
Turn-On Time  
Turn-Off Time  
t
1.2  
40  
µs  
µs  
gt  
t
q
FIGURE 1 – AVERAGE CURRENT DERATING  
FIGURE 2 – MAXIMUM ON-STATE POWER DISSIPATION  
110  
100  
10  
JUNCTION TEMPERATURE  
110°C  
90  
80  
70  
8
6
4
DC  
HALF SINE WAVE  
RESISTIVE OR INDUCTIVE LOAD  
50 TO 400Hz.  
60  
50  
DC  
HALF SINE WAVE  
RESISTIVE OR INDUCTIVE LOAD.  
50 to 400 Hz  
40  
30  
2
0
20  
10  
0
.4  
.8  
1.2  
1.6  
2.0  
2.4  
2.6  
3.2  
3.6  
4.0  
0
.4  
.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
4.0  
I
AVERAGE ON-STATE CURRENT (AMPERES)  
I
AVERAGE ON-STATE CURRENT (AMPERES)  
T(AV)  
T(AV)  
2
Motorola Thyristor Device Data  
 复制成功!