MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BFR92ALT1/D
The RF Line
NPN Silicon
High-Frequency Transistors
Designed primarily for use in high–gain, low–noise, small–signal UHF and
microwave amplifiers constructed with thick and thin–film circuits using surface
mount components.
•
T1 suffix indicates tape and reel packaging of 3,000 units per reel.
BFR92ALT1
RF TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C
Derate linearly above Tcase = 75°C @
Symbol
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
Value
15
20
2.0
25
150
0.273
3.64
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance Junction to Case
Symbol
Tstg
R
θJC
Max
– 55 to +150
275
Unit
°C
°C/W
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
DEVICE MARKING
BFR92ALT1 = P2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 10 mA)
Collector–Base Breakdown Voltage
(IC = 100
µA)
Emitter–Base Breakdown Voltage
(IC = 100
µA)
Collector Cutoff Current
(VCB = 10 V)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
15
20
2.0
—
—
—
—
50
Vdc
Vdc
Vdc
nA
ON CHARACTERISTICS
DC Current Gain
(IC = 14 mA, VCE = 10 V)
Collector–Emitter Saturation Voltage (1)
(IC = 25 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (1)
(IC = 25 mA, IB = 5.0 mA)
NOTE:
1. Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
hFE
VCE(sat)
VBE(sat)
40
—
—
—
0.5
1.2
—
Vdc
Vdc
(continued)
REV 7
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
BFR92ALT1
1
MOTOROLA [ MOTOROLA, INC ]
