BF421 BF423
150
100
hFE, DC CURRENT GAIN
+25°C
70
50
–55°C
TJ = +125°C
VCE = –10 Vdc
30
20
15
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–80
–100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
50
Cib
C, CAPACITANCE (pF)
20
10
5.0
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
100
80
60
40
30
20
TJ = 25°C
VCE = –20 Vdc
2.0
Ccb
1.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000
VR, REVERSE VOLTAGE (VOLTS)
0
–1.0
–2.0
–5.0
–10
–20
IC, COLLECTOR CURRENT (mA)
–50
–100
Figure 2. Capacitances
Figure 3. Current–Gain — Bandwidth Product
–1.0
IC, COLLECTOR CURRENT (mA)
–500
1.0 ms
1.0 s
100
µs
–0.8
V, VOLTAGE (VOLTS)
VBE @ VCE = –10 V
–0.6
–200
–100
BF423
–50
1.5 WATT THERMAL
LIMITATION @ TC = 25°C
625 mW THERMAL
LIMITATION @ TA = 25°C
–0.4
BF421
–20
–10
–0.2
VCE(sat) @ IC/IB = 10 mA
0
–1.0
–2.0
–5.0
–10
–20
IC, COLLECTOR CURRENT (mA)
–50
–100
–5.0
–3.0
BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION TJ = 150°C
–100
–200 –300
–5.0
–10
–20 –30
–50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. “On” Voltages
Figure 5. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MOTOROLA [ MOTOROLA, INC ]
