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BD157 参数 Datasheet PDF下载

BD157图片预览
型号: BD157
PDF下载: 下载PDF文件 查看货源
内容描述: 塑料中功率NPN硅晶体管 [Plastic Medium Power NPN Silicon Transistor]
分类和应用: 晶体晶体管功率双极晶体管开关局域网
文件页数/大小: 4 页 / 104 K
品牌: MOTOROLA [ MOTOROLA ]
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25  
20  
15  
1.0  
V
@ I /I = 10  
C B  
0.8  
0.6  
0.4  
BE  
V
@ V = 10 V  
CE  
BE  
V
@ I /I = 10  
C B  
CE(sat)  
10  
0.2  
0
T = +25°C  
J
I
/I = 5.0  
C B  
5.0  
0
20  
40  
60  
80  
100  
120  
C)  
140  
160  
10  
20  
30  
I , COLLECTOR CURRENT (mA)  
C
50  
100  
200 300  
500  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power–Temperature Derating Curve  
Figure 2. “On” Voltages  
1.0  
0.7  
0.5  
10  
µs  
500 µs  
The Safe Operating Area Curves indicate I – V limits  
CE  
1.0 ms  
C
T
= 150°C  
0.3  
0.2  
J
dc  
below which the device will not enter secondary breakdown.  
Collector load lines for specific circuits must fall within the ap-  
plicable Safe Area to avoid causing a catastrophic failure. To  
0.1  
0.07  
0.05  
BONDING WIRE LIMITED  
THERMALLY LIMITED @ T = 25  
(SINGLE PULSE)  
SECOND BREAKDOWN LIMITED  
insure operation below, the maximum T , power–tempera-  
J
°C  
C
ture derating must be observed for both steady state and  
pulse power conditions.  
0.03  
0.02  
BD157  
BD158  
BD159  
0.01  
10  
20  
30  
50  
100  
200  
300  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
Figure 3. DC Safe Operating Area  
300  
V
V
= 10 V  
= 2.0 V  
CE  
CE  
200  
T
= 150°C  
J
100  
70  
+ 100°C  
50  
+ 25°C  
30  
20  
– 55°C  
10  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
200  
300  
500  
I
, COLLECTOR CURRENT (mAdc)  
C
Figure 4. Current Gain  
2
Motorola Bipolar Power Transistor Device Data  
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