MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC817–16LT1/D
General Purpose Transistors
NPN Silicon
2
BASE
1
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
5.0
500
Unit
V
V
V
mAdc
COLLECTOR
3
BC817-16LT1
BC817-25LT1
BC817-40LT1
3
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
225
1.8
R
q
JA
PD
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
Collector – Emitter Breakdown Voltage
(VEB = 0, IC = –10
µA)
Emitter – Base Breakdown Voltage
(IE = –1.0
m
A)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
—
—
—
—
100
5.0
nA
µA
45
50
5.0
—
—
—
—
—
—
V
V
V
Thermal Clad is a registered trademark of the Bergquist Company.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
