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4N37 参数 Datasheet PDF下载

4N37图片预览
型号: 4N37
PDF下载: 下载PDF文件 查看货源
内容描述: 标准通孔CASE 730A -04 [STANDARD THRU HOLE CASE 730A-04]
分类和应用:
文件页数/大小: 6 页 / 279 K
品牌: MOTOROLA [ MOTOROLA ]
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(1)  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
(1)  
Typ  
Characteristic  
INPUT LED  
Symbol  
Min  
Max  
Unit  
Forward Voltage (I = 10 mA)  
T
= 25°C  
= –55°C  
= 100°C  
V
F
0.8  
0.9  
0.7  
1.15  
1.3  
1.05  
1.5  
1.7  
1.4  
V
F
A
T
A
T
A
Reverse Leakage Current (V = 6 V)  
R
I
10  
µA  
R
Capacitance (V = 0 V, f = 1 MHz)  
C
18  
pF  
J
OUTPUT TRANSISTOR  
Collector–Emitter Dark Current (V  
Collector–Emitter Dark Current (V  
= 10 V, T = 25°C)  
I
I
1
50  
500  
nA  
µA  
CE  
CE  
A
CEO  
= 30 V, T = 100°C)  
A
Collector–Base Dark Current (V  
CB  
= 10 V)  
T
= 25°C  
= 100°C  
0.2  
100  
20  
nA  
A
A
CBO  
T
Collector–Emitter Breakdown Voltage (I = 1 mA)  
V
V
V
30  
70  
7
45  
100  
7.8  
400  
7
V
V
C
(BR)CEO  
(BR)CBO  
(BR)EBO  
Collector–Base Breakdown Voltage (I = 100 µA)  
C
Emitter–Base Breakdown Voltage (I = 100 µA)  
V
E
DC Current Gain (I = 2 mA, V  
= 5 V)  
Collector–Emitter Capacitance (f = 1 MHz, V  
h
FE  
C
CE  
C
CB  
pF  
pF  
pF  
C
CE  
= 0)  
CE  
= 0)  
Collector–Base Capacitance (f = 1 MHz, V  
CB  
19  
9
Emitter–Base Capacitance (f = 1 MHz, V  
COUPLED  
= 0)  
C
EB  
EB  
(2)  
I (CTR)  
C
Output Collector Current  
T
= 25°C  
= –55°C  
= 100°C  
10 (100)  
4 (40)  
4 (40)  
30 (300)  
mA (%)  
A
(I = 10 mA, V  
CE  
= 10 V)  
T
F
A
T
A
Collector–Emitter Saturation Voltage (I = 0.5 mA, I = 10 mA)  
V
CE(sat)  
0.14  
7.5  
5.7  
3.2  
4.7  
0.3  
10  
10  
V
C
F
Turn–On Time  
t
µs  
on  
off  
Turn–Off Time  
t
(I = 2 mA, V  
C
= 10 V,  
(3)  
CC  
R
= 100 )  
L
Rise Time  
t
r
Fall Time  
t
f
Isolation Voltage (f = 60 Hz, t = 1 sec)  
V
7500  
Vac(pk)  
ISO  
ISO  
(4)  
Isolation Current  
Isolation Current (V  
Isolation Current (V  
(V  
= 3550 Vpk)  
= 2500 Vpk)  
= 1500 Vpk)  
4N35  
4N36  
4N37  
I
8
100  
100  
100  
µA  
I–O  
I–O  
I–O  
(4)  
Isolation Resistance (V = 500 V)  
11  
10  
R
C
2
ISO  
ISO  
(4)  
Isolation Capacitance (V = 0 V, f = 1 MHz)  
0.2  
pF  
1. Always design to the specified minimum/maximum electrical limits (where applicable).  
2. Current Transfer Ratio (CTR) = I /I x 100%.  
C F  
3. For test circuit setup and waveforms, refer to Figure 11.  
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.  
2
Motorola Optoelectronics Device Data