4N25 4N25A 4N26 4N27 4N28
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)(1)
Characteristic
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25°C
TA = –55°C
TA = 100°C
VF
—
—
—
—
—
1.15
1.3
1.05
—
18
1.5
—
—
100
—
Volts
Symbol
Min
Typ
(1)
Max
Unit
Reverse Leakage Current (VR = 3 V)
Capacitance (V = 0 V, f = 1 MHz)
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
(VCE = 10 V, TA = 25°C
(VCE = 10 V, TA = 100°C)
Collector–Base Dark Current (VCB = 10 V)
Collector–Emitter Breakdown Voltage (IC = 1 mA)
Collector–Base Breakdown Voltage (IC = 100
µA)
Emitter–Collector Breakdown Voltage (IE = 100
µA)
DC Current Gain (IC = 2 mA, VCE = 5 V)
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0)
Collector–Base Capacitance (f = 1 MHz, VCB = 0)
Emitter–Base Capacitance (f = 1 MHz, VEB = 0)
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V)
4N25,25A,26
4N27,28
Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA)
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100
Ω)
(3)
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100
Ω)
(3)
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100
Ω)
(3)
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100
Ω)
(3)
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
1.
2.
3.
4.
4N25,25A,26,27
4N28
All Devices
IR
CJ
µA
pF
ICEO
ICEO
ICBO
V(BR)CEO
V(BR)CBO
V(BR)ECO
hFE
CCE
CCB
CEB
IC (CTR)(2)
—
—
—
—
30
70
7
—
—
—
—
1
1
1
0.2
45
100
7.8
500
7
19
9
50
100
—
—
—
—
—
—
—
—
—
nA
µA
nA
Volts
Volts
Volts
—
pF
pF
pF
mA (%)
2 (20)
1 (10)
7 (70)
5 (50)
0.15
2.8
4.5
1.2
1.3
—
—
0.2
—
—
0.5
—
—
—
—
—
—
—
Volts
µs
µs
µs
µs
Vac(pk)
Ω
pF
VCE(sat)
ton
toff
tr
tf
VISO
RISO
CISO
—
—
—
—
—
7500
1011
—
Always design to the specified minimum/maximum electrical limits (where applicable).
Current Transfer Ratio (CTR) = IC/IF x 100%.
For test circuit setup and waveforms, refer to Figure 11.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2
Motorola Optoelectronics Device Data
MOTOROLA [ MOTOROLA, INC ]
