MOSPEC
S20C70CE Thru S20C100CE
SCHOTTKY BARRIER
RECTIFIERS
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
20 AMPERES
70-100 VOLTS
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 150℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
TO-220AB
MAXIMUM RATINGS
S20C
Characteristic
Symbol
Unit
70CE
80CE
90CE 100CE
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
80
90
63
100
70
V
RMS Reverse Voltage
VR(RMS)
49
56
V
A
MILLIMETERS
DIM
MIN
MAX
Average Rectifier Forward Current
Total Device (Rated VR),TC=100℃
10
20
IF(AV)
A
B
C
D
E
F
G
H
I
J
K
L
M
O
14.68
9.78
5.02
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
15.32
10.42
6.52
14.62
4.07
2.66
1.36
0.96
4.98
1.38
2.98
0.55
2.98
3.90
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
20
A
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
IFSM
200
Operating and Storage Junction
Temperature Range
℃
TJ , TSTG
-65 to +150
ELECTRIAL CHARACTERISTICS
S20C
Characteristic
Symbol
Unit
70CE
80CE
90CE 100CE
Maximum Instantaneous Forward Voltage
( IF =10 Amp TC = 25℃)
( IF =10 Amp TC = 125℃)
Common Cathode
Suffix “C”
VF
0.75
0.68
0.80
0.73
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
IR
0.5
30
mA
MOSPEC [ MOSPEC SEMICONDUCTOR ]
