MOSPEC
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 150℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
S16C70CE Thru S16C100CE
SCHOTTKY BARRIER
RECTIFIERS
16 AMPERES
70-100 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Total Device (Rated V
R
),T
C
=100℃
Peak Repetitive Forward Current
(Rate V
R
, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
Symbol
70CE
V
RRM
V
RWM
V
R
V
R(RMS)
I
F(AV)
70
S16C
80CE
80
90CE
90
100CE
100
V
Unit
49
56
8.0
16
16
63
70
V
DIM
A
I
FM
A
I
FSM
150
A
T
J
, T
STG
-65 to +150
℃
A
B
C
D
E
F
G
H
I
J
K
L
M
O
MILLIMETERS
MIN
MAX
14.68
15.32
9.78
10.42
5.02
6.52
13.06
14.62
3.57
4.07
2.42
2.66
1.12
1.36
0.72
0.96
4.22
4.98
1.14
1.38
2.20
2.98
0.33
0.55
2.48
2.98
3.70
3.90
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I
F
=8 Amp T
C
= 25℃)
( I
F
=8 Amp T
C
= 125℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T
C
= 25℃)
( Rated DC Voltage, T
C
= 125℃)
Symbol
70CE
V
F
S16C
80CE
90CE
100CE
V
Common Cathode
Suffix “C”
Unit
0.75
0.68
0.80
0.73
I
R
0.5
20
mA
MOSPEC [ MOSPEC SEMICONDUCTOR ]
