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V62C1801024LL-100V 参数 Datasheet PDF下载

V62C1801024LL-100V图片预览
型号: V62C1801024LL-100V
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗128K ×8 CMOS SRAM [Ultra Low Power 128K x 8 CMOS SRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 94 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V62C1801024L(L)
Read Cycle
(3,9)
(V
cc
= 1.8 to 2.2V, Gnd = 0V, T
A
= 0
0
C to +70
0
C / -40
0
C to +85
0
C)
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
Power-Up Time
Power-Down Time
Symbol
t
RC
t
AA
t
ACE
t
OE
t
OH
t
CLZ
t
CHZ
t
OLZ
t
OHZ
t
PU
t
PD
70
-
-
-
10
10
-
5
-
0
-
-70
-
70
70
40
-
-
30
-
25
-
70
85
-
-
-
10
10
-
5
-
0
-
-85
-
85
85
40
-
-
35
-
30
-
85
-100
100
-
-
-
10
10
-
5
-
0
-
-
100
100
50
-
-
40
-
35
-
100
-150
150
-
-
-
10
10
-
5
-
0
-
-
150
150
70
-
-
50
-
40
-
150
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
Min Max Min Max Min Max Min Max
4,5
4,5
4,5
4,5
5
5
Write Cycle
(3,11)
(V
cc
= 1.8 to 2.2V, Gnd = 0V, T
A
= 0
0
C to +70
0
C / -40
0
C to +85
0
C)
Parameter
Write Cycle Time
Chip Enable to Write End
Address Setup to Write End
Address Setup Time
Write Pulse Width
Write Recovering Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WZ
t
OW
70
60
60
0
50
0
30
0
-
5
-70
-85
-100
-150
Unit
-
-
-
-
-
-
-
-
50
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
Min Max Min Max Min Max Min Max
-
-
-
-
-
-
-
-
30
-
85
70
70
0
60
0
35
0
-
5
-
-
-
-
-
-
-
-
35
-
100
80
80
0
70
0
40
0
-
5
-
-
-
-
-
-
-
-
40
-
150
120
120
0
100
0
60
0
-
5
4,5
4,5
5
REV. 1.1
April
2001 V62C1801024L(L)