V62C1161024L(L)
Data Retention Characteristics
(L Version Only)
(1)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
(2)
Symbol
V
DR
I
CCDR
t
CDR
Test Condition
CE > V
CC
- 0.2V
L
V
IN
>V
CC
- 0.2V or
V
IN
< 0.2V
Min
1.0
-
0
t
RC
Max
-
Unit
V
µA
ns
ns
5
1
-
-
t
R
Data Retention Waveform
(L Version Only) (T
A
= 0
0
C to +70
0
C / -40
0
C to +85
0
C)
Data Retention Mode
V
CC
Vcc_typ
V
DR
>
1.0V
Vcc_typ
t
CDR
CE
V
DR
t
R
V
IH
V
IH
Notes
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
L-version includes this feature.
This Parameter is sampled and not 100% tested.
For test conditions, see
AC Test Condition,
Figure A.
This parameter is tested with CL = 5pF as shown in Figure B. Transition is measured + 500mV from steady-state voltage.
This parameter is guaranteed, but is not tested.
WE is High for read cycle.
CE and OE are LOW for read cycle.
Address valid prior to or coincident with CE transition LOW.
All read cycle timings are referenced from the last valid address to the first transtion address.
CE or WE must be HIGH during address transition.
All write cycle timings are referenced from the last valid address to the first transition address.
8
REV. 1.1
April
2001 V62C1161024L(L)