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V61C518256-12R 参数 Datasheet PDF下载

V61C518256-12R图片预览
型号: V61C518256-12R
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8的高速静态RAM [32K X 8 HIGH SPEED STATIC RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 61 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
Pin Descriptions
A
0
–A
14
Address Inputs
These 15 address inputs select one of the 32,768 x
8 bit segments in the RAM.
CE
Chip Enable Inputs
CE is an active LOW input. Chip Enable must be
LOW when reading from or writing to the device.
When HIGH, the device is in standby mode with I/O
pins in the high impedance state.
OE
Output Enable Input
The Output Enable input is active LOW. When OE
is LOW with CE LOW and WE HIGH, data of the
selected memory location will be available on the
I/O pins. When OE is HIGH, the I/O pins will be in
the high impedance state.
V61C518256
WE
Write Enable Input
An active LOW input, WE input controls read and
write operations. When CE and WE inputs are both
LOW, the data present on the I/O pins will be
written into the selected memory location.
I/O
0
–I/O
7
Data Input and Data Output Ports
These 8 bidirectional ports are used to read data
from and write data into the RAM.
V
CC
GND
Power Supply
Ground
Pin Configurations (Top View)
28-Pin SOJ
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
518256-01
28-Pin TSOP (Standard)
V
CC
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
518256-03
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
V61C518256 Rev. 0.3 July 1998
2