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V61C3181024 参数 Datasheet PDF下载

V61C3181024图片预览
型号: V61C3181024
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8的高速静态RAM [128K X 8 HIGH SPEED STATIC RAM]
分类和应用:
文件页数/大小: 10 页 / 80 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MO SEL VITELIC  
V61C3181024  
Switching Waveforms (Write Cycle)  
(4)  
Write Cycle 1 (WE Controlled)  
tWC  
ADDRESS  
(2)  
tAH  
(6)  
tCW  
CE1  
CE2  
tAW  
(6)  
tCW  
tAS  
WE  
(1)  
tWP  
OUTPUT  
tDW  
tDH  
tWHZ  
INPUT  
3181024 12  
(4)  
Write Cycle 2 (CE Controlled)  
tWC  
ADDRESS  
(2)  
tAH  
(6)  
tCW  
(4)  
CE1  
CE2  
WE  
tAW  
(6)  
tCW  
tAS  
High-Z  
OUTPUT  
INPUT  
tDW  
tDH  
(5)  
3181024 13  
NOTES:  
1. The internal write time of the memory is defined by the overlap of CE and CE active and WE low. All signals must be active to  
1
2
initiate and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to  
the second transition edge of the signal that terminates the write.  
2.  
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the outputs must not be applied.  
4. OE = V or V . However it is recommended to keep OE at V during write cycle to avoid bus contention.  
t
is measured from the earlier of CE or WE going high, or CE going LOW at the end of the write cycle.  
AH 1 2  
IL  
IH  
IH  
5. If CE is LOW and CE is HIGH during this period, I/O pins are in the output state. Then the data input signals of opposite phase  
1
2
to the outputs must not be applied to them.  
t is measured from CE going low or CE going HIGH to the end of write.  
CW  
6.  
1
2
V61C3181024 Rev. 1.3 February 1999  
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