V55C2128164V(T/B)
128Mbit LOW-POWER SDRAM
2.5 VOLT, TSOP II / BGA PACKAGE
8M X 16
PRELIMINARY
CILETIV LESO M
6
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
Clock Access Time (t
AC1
) CAS Latency = 1
166 MHz
6 ns
5.4 ns
5.4 ns
19 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
19 ns
7
143 MHz
7 ns
5.4 ns
6 ns
19 ns
8PC
125 MHz
8 ns
6 ns
6 ns
19 ns
10
100MHz
10 ns
7 ns
8 ns
22 ns
Features
■
4 banks x 2Mbit x 16 organization
■
High speed data transfer rates up to 166 MHz
■
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
■
Single Pulsed RAS Interface
■
Data Mask for Read/Write Control
■
Four Banks controlled by BA0 & BA1
■
Programmable CAS Latency:1, 2, 3
■
Programmable Wrap Sequence: Sequential or
Interleave
■
Programmable Burst Length:
1, 2, 4, 8, Full page for Sequential Type
1, 2, 4, 8 for Interleave Type
■
Multiple Burst Read with Single Write Operation
■
Automatic and Controlled Precharge Command
■
Random Column Address every CLK (1-N Rule)
■
Power Down Mode and Clock Suspend Mode
■
Deep Power Mode
■
Auto Refresh and Self Refresh
■
Refresh Interval: 4096 cycles/64 ms
■
Available in 54-ball FBGA, with 9x6 ball array
with 3 depupulated rows, 9x8 mm and 54 pin
TSOP II
■
VDD=2.5V, VDDQ=1.8V
■
■
Programmable Power Reduction Feature by par-
tial array activation during Self-Refresh
■
Operating Temperature Range
Commercial (
0°C to 70°C)
Extended (-25°C to +85°C)
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
-25°C to 85°C
Package Outline
T/B
•
•
Access Time (ns)
6
•
•
7PC
•
•
7
•
•
8PC
•
•
10
•
•
Temperature
Mark
Commercial
Extended
V55C2128164V(T/B) Rev. 1.2 August 2002
1