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V53C832L30 参数 Datasheet PDF下载

V53C832L30图片预览
型号: V53C832L30
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能3.3伏256K X 32 EDO页模式的CMOS动态RAM [HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 18 页 / 181 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC  
V53C832L  
AC Characteristics (Cont’d)  
30  
35  
40  
#
34  
35  
36  
37  
Symbol  
Parameter  
Min. Max. Min. Max. Min. Max. Unit Notes  
t
t
t
t
Write to OE Hold Time  
5
5
5
5
6
6
ns  
ns  
ns  
ns  
14  
14  
WOH  
OED  
RWC  
RRW  
OE to Data Delay Time  
Read-Modify-Write Cycle Time  
100  
65  
105  
70  
110  
75  
Read-Modify-Write Cycle  
RAS Pulse Width  
38  
39  
t
t
CAS to WE Delay  
26  
50  
28  
54  
30  
58  
ns  
ns  
12  
12  
CWD  
RAS to WE Delay in Read-  
Modify-Write Cycle  
RWD  
40  
41  
42  
t
t
t
CAS Pulse Width (RMW)  
Col. Address to WE Delay  
44  
32  
12  
46  
35  
14  
48  
38  
15  
ns  
ns  
ns  
CRW  
AWD  
PC  
12  
EDO Fast Page Mode Read  
or Write Cycle Time  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
t
t
t
t
t
t
t
t
t
t
t
CAS Precharge Time  
3
4
5
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
CP  
Column Address to RAS Setup Time  
Access Time from Column Precharge  
Data in Hold Time Referenced to RAS  
CAS Setup Time CAS- before-RASRefresh  
RAS to CAS Precharge Time  
16  
18  
20  
CAR  
CAP  
DHR  
CSR  
RPC  
CHR  
PCM  
COH  
OES  
OEH  
19  
21  
23  
7
26  
10  
0
28  
10  
0
30  
10  
0
CAS Hold Time CAS-before-RAS Refresh  
EDO Page Mode Read-Modify-Write Cycle Time  
Output Hold After CAS Low  
7
8
8
56  
5
58  
5
60  
5
OE Low to CAS HIGH setup time  
5
5
5
OE Hold Time from WE during Read-Modify Write  
Cycle  
10  
10  
10  
54  
55  
56  
t
t
t
OE High Pulse Width  
10  
10  
10  
ns  
ns  
ms  
OEP  
Transition Time (Rise and Fall)  
Refresh Interval (512 Cycles)  
1.5  
50  
8
1.5  
50  
8
1.5  
50  
8
15  
17  
T
REF  
V53C832L Rev. 1.6 August 1999  
6