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V53C8258H50 参数 Datasheet PDF下载

V53C8258H50图片预览
型号: V53C8258H50
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能256K ×8 EDO页模式的CMOS动态RAM [HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 18 页 / 221 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V53C8258H  
MOSEL VITELIC  
Data Output Operation  
Table 1. V53C8258H Data Output  
The V53C8258H Input/Output is controlled by  
OE, CAS, WE and RAS. A RAS low transition  
enables the transfer of data to and from the  
selected row address in the Memory Array. A RAS  
high transition disables data transfer and latches  
the output data if the output is enabled. After a  
memory cycle is initiated with a RAS low transition,  
a CAS low transition or CAS low level enables the  
internal I/O path. A CAS high transition or a CAS  
high level disables the I/O path and the output driver  
if it is enabled. A CAS low transition while RAS is  
high has no effect on the I/O data path or on the  
output drivers. The output drivers, when otherwise  
enabled, can be disabled by holding OE high. The  
OE signal has no effect on any data stored in the  
output latches. A WE low level can also disable the  
output drivers when CAS is low. During a Write  
cycle, if WE goes low at a time in relationship to  
CAS that would normally cause the outputs to be  
active, it is necessary to use OE to disable the  
output drivers prior to the WE low transition to allow  
Data In Setup Time (tDS) to be satisfied.  
Operation for Various Cycle Types  
Cycle Type  
I/O State  
Read Cycles  
Data from Addressed  
Memory Cell  
CAS-Controlled Write  
Cycle (Early Write)  
High-Z  
WE-Controlled Write  
Cycle (Late Write)  
OE Controlled. High  
OE = High-Z I/Os  
Read-Modify-Write  
Cycles  
Data from Addressed  
Memory Cell  
EDO Read Cycle  
Data from Addressed  
Memory Cell  
EDO Write Cycle  
(Early Write)  
High-Z  
EDO Read-Modify-  
Write Cycle  
Data from Addressed  
Memory Cell  
RAS-only Refresh  
High-Z  
CAS-before-RAS  
Refresh Cycle  
Data remains as in  
previous cycle  
Power-On  
CAS-only Cycles  
High-Z  
After application of the VCC supply, an initial  
pause of 200 µs is required followed by a minimum  
of 8 initialization cycles (any combination of cycles  
containing a RAS clock). Eight initialization cycles  
are required after extended periods of bias without  
clocks (greater than the Refresh Interval).  
During Power-On, the VCC current requirement of  
the V53C8258H is dependent on the input levels of  
RAS and CAS. If RAS is low during Power-On, the  
device will go into an active cycle and ICC will exhibit  
current transients. It is recommended that RAS and  
CAS track with VCC or be held at a valid VIH during  
Power-On to avoid current surges.  
V53C8258H Rev. 1.4 February 1997  
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