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V53C516405A60 参数 Datasheet PDF下载

V53C516405A60图片预览
型号: V53C516405A60
PDF下载: 下载PDF文件 查看货源
内容描述: 4M X 4 EDO页模式的CMOS动态RAM [4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 24 页 / 172 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MO SEL VITELIC  
V53C516405A  
If they were not equal, the I/O would indicate a “0”.  
The WCBR cycle (WE, CAS before RAS) puts the  
device into test mode. To exit from test mode, a  
“CAS before RAS refresh”, “RAS only refresh” or  
“Hidden refresh” can be used.Refresh during test  
mode operation can be performed by normal read  
cycles or by WCBR refresh cycles.  
Row addresses A0 through A9 have to kept high  
to perform a testmode entry cycle. All other address-  
es are don’t care.  
Test Mode  
As the V53C516405A is organized internally as  
1M x 16-bits, a test mode cycle using 4:1 compres-  
sion can be used to improve test time. Note that in  
the 4M x 4 version the test time is reduced by 1/4 for  
a N test pattern.  
In a test mode “write” the data from each I/O pin is  
written into four 1M blocks simultaneously (all “1” s  
or all “0” s). In test mode “read” each I/O output is  
used for indicating the test mode result. If the inter-  
nal four bits are equal, the I/O would indicate a “1”.  
Block Diagram in Test Mode  
A0C,A1C  
A0C,A1C  
1 M Block  
Vcc  
Normal  
1 M Block  
Normal  
I/O 1  
I/O 1  
1 M Block  
Test  
Test  
1 M Block  
Vss  
Vcc  
A0C,A1C  
A0C,A1C  
1 M Block  
Normal  
Normal  
1 M Block  
I/O 2  
I/O 2  
1 M Block  
Test  
Test  
1 M Block  
Vss  
Vcc  
A0C,A1C  
A0C,A1C  
1 M Block  
Normal  
1 M Block  
Normal  
I/O 3  
1 M Block  
Test  
I/O 3  
Test  
1 M Block  
Vss  
Vcc  
A0C,A1C  
A0C,A1C  
1 M Block  
Normal  
1 M Block  
Normal  
I/O 4  
I/O 4  
Vss  
1 M Block  
Test  
Test  
1 M Block  
V53C516405A Rev. 1.1 March 1998  
22  
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