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V53C316405A60 参数 Datasheet PDF下载

V53C316405A60图片预览
型号: V53C316405A60
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3伏4M ×4 EDO页模式的CMOS动态RAM [3.3 VOLT 4M x 4 EDO PAGE MODE CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 24 页 / 172 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
AC Characteristics
(5,6)
T
A
= 0 to 70 ˚C,V
CC
= 3.3 V
±
0.3V, t
T
= 2 ns
-50
#
Symbol
Parameter
min.
max.
min.
-60
V53C316405A
max.
Unit
Note
Write Cycle
31
32
33
34
35
36
37
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
8
8
0
13
13
0
8
10
10
0
15
15
0
10
ns
ns
ns
ns
ns
ns
ns
16
16
15
Read-modify-Write Cycle
38
39
40
41
42
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
113
64
27
39
10
138
77
32
47
13
ns
ns
ns
ns
ns
15
15
15
EDO Page Mode Cycle
43
44
45
46
47
48
t
PC
t
CP
t
CPA
t
COH
t
RAS
t
RHPC
t
DES
EDO page mode cycle time
CAS precharge time
Access time from CAS precharge
Output data hold time
RAS pulse width in EDO mode
CAS precharge to RAS Delay
OE setup time prior to CAS
20
8
5
50
27
5
27
200k
25
10
5
60
32
5
32
200k
ns
ns
ns
ns
ns
ns
ns
7
EDO Page Mode Read-modify-Write Cycle
49
50
t
PRWC
t
CPWD
EDO page mode read-write cycle time
CAS precharge to WE
58
41
68
49
ns
ns
CAS-before-RAS Refresh Cycle
51
52
53
54
55
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
10
10
5
10
10
10
10
5
10
10
ns
ns
ns
ns
ns
V53C316405A Rev. 1.2 March 1998
6