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V53C316405A60 参数 Datasheet PDF下载

V53C316405A60图片预览
型号: V53C316405A60
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3伏4M ×4 EDO页模式的CMOS动态RAM [3.3 VOLT 4M x 4 EDO PAGE MODE CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 24 页 / 172 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MO SEL VITELIC  
V53C316405A  
they were not equal, the I/O would indicate a “0”. The  
WCBR cycle (WE, CAS before RAS) puts the device  
into test mode. To exit from test mode, a “CAS be-  
fore RAS refresh”, “RAS only refresh” or “Hidden re-  
fresh” can be used.Refresh during test mode  
operation can be performed by normal read cycles or  
by WCBR refresh cycles.  
Row addresses A0 through A11 have to kept high  
to perform a testmode entry cycle. All other address-  
es are don’t care.  
Test Mode  
As the V53C316405A is organized internally as  
4M x 4-bits, a test mode cycle using 4:1 compression  
can be used to improve test time. Note that in the 4M  
x 4 version the test time is reduced by 1/4 for a N test  
pattern.  
In a test mode “write” the data from each I/O pin is  
written into four 1M blocks simultaneously (all “1” s  
or all “0” s). In test mode “read” each I/O output is  
used for indicating the test mode result. If the internal  
four bits are equal, the I/O would indicate a “1”. If  
Block Diagram in Test Mode  
A0C,A1C  
A0C,A1C  
1 M Block  
Vcc  
Normal  
1 M Block  
Normal  
I/O 1  
I/O 1  
1 M Block  
Test  
Test  
1 M Block  
Vss  
Vcc  
A0C,A1C  
A0C,A1C  
1 M Block  
Normal  
Normal  
1 M Block  
I/O 2  
I/O 2  
1 M Block  
Test  
Test  
1 M Block  
Vss  
Vcc  
A0C,A1C  
A0C,A1C  
1 M Block  
Normal  
1 M Block  
Normal  
I/O 3  
1 M Block  
Test  
I/O 3  
Test  
1 M Block  
Vss  
Vcc  
A0C,A1C  
A0C,A1C  
1 M Block  
Normal  
1 M Block  
Normal  
I/O 4  
I/O 4  
Vss  
1 M Block  
Test  
Test  
1 M Block  
V53C316405A Rev. 1.2 March 1998  
22  
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