欢迎访问ic37.com |
会员登录 免费注册
发布采购

V436632Z24VXTG-75PC 参数 Datasheet PDF下载

V436632Z24VXTG-75PC图片预览
型号: V436632Z24VXTG-75PC
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3伏32M ×64的高性能133 MHz的SDRAM SODIMM UNBUFFERED [3.3 VOLT 32M x 64 HIGH PERFORMANCE 133 MHZ SDRAM UNBUFFERED SODIMM]
分类和应用: 动态存储器
文件页数/大小: 12 页 / 275 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
 浏览型号V436632Z24VXTG-75PC的Datasheet PDF文件第4页浏览型号V436632Z24VXTG-75PC的Datasheet PDF文件第5页浏览型号V436632Z24VXTG-75PC的Datasheet PDF文件第6页浏览型号V436632Z24VXTG-75PC的Datasheet PDF文件第7页浏览型号V436632Z24VXTG-75PC的Datasheet PDF文件第9页浏览型号V436632Z24VXTG-75PC的Datasheet PDF文件第10页浏览型号V436632Z24VXTG-75PC的Datasheet PDF文件第11页浏览型号V436632Z24VXTG-75PC的Datasheet PDF文件第12页  
V436632Z24V  
AC Characteristics 3,4  
T = 0° to 70°C; V = 0V; V = 3.3V ± 0.3V, t = 1 ns  
A
SS  
CC  
T
Limit Values  
-75PC  
-75  
-10PC  
#
Symbol Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
Note  
Clock and Clock Enable  
1
2
3
tCK  
fCK  
tAC  
Clock Cycle Time  
CAS Latency = 3  
CAS Latency = 2  
7.5  
7.5  
7.5  
10  
10  
10  
ns  
ns  
System frequency  
CAS Latency = 3  
CAS Latency = 2  
133  
133  
133  
100  
100  
100  
MHz  
MHz  
Clock Access Time  
CAS Latency = 3  
CAS Latency = 2  
4,5  
5.4  
6
5.4  
6
6
6
ns  
ns  
4
5
tCH  
tCL  
Clock High Pulse Width  
Clock Low Pulse Width  
2.5  
2.5  
1.5  
0.8  
2.5  
8
2.5  
2.5  
1.5  
0.8  
2.5  
8
3
3
2
1
2
8
1
ns  
ns  
ns  
ns  
ns  
ns  
ns  
6
6
7
7
8
9
6
tCS  
Input Setup time  
7
tCH  
Input Hold Time  
8
tCKSP  
tCKSR  
tT  
CKE Setup Time (Power down mode)  
CKE Setup Time (Self Refresh Exit)  
Transition time (rise and fall)  
9
10  
1
1
Common Parameters  
11  
12  
13  
14  
15  
16  
tRCD  
tRC  
tRAS  
tRP  
tRRD  
tCCD  
RAS to CAS delay  
20  
70  
42  
15  
14  
1
120k  
20  
70  
45  
20  
15  
1
120k  
20  
70  
45  
20  
20  
1
120k  
ns  
ns  
Cycle Time  
Active Command Period  
Precharge Time  
ns  
ns  
Bank to Bank Delay Time  
CAS to CAS delay time (same bank)  
ns  
CLK  
Refresh Cycle  
10  
64  
10  
64  
10  
64  
17  
18  
tSREX  
tREF  
Self Refresh Exit Time  
ns  
9
8
Refresh Period (8192 cycles)  
ms  
Read Cycle  
19  
20  
21  
22  
tOH  
tLZ  
Data Out Hold Time  
3
0
3
2
3
0
3
2
3
0
3
2
8
-
ns  
ns  
4
Data Out to Low Impedance Time  
Data Out to High Impedance Time  
DQM Data Out Disable Latency  
tHZ  
7.5  
-
7.5  
-
ns  
10  
tDQZ  
CLK  
Write Cycle  
23  
24  
25  
tDPL  
tDAL  
Data input to Precharge (write recovery)  
Data In to Active/refresh  
2
5
0
2
5
0
1
5
0
CLK  
CLK  
CLK  
11  
tDQW  
DQM Write Mask Latency  
V436632Z24V Rev. 1.1 February 2002  
8