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V436616Y24VATG-75 参数 Datasheet PDF下载

V436616Y24VATG-75图片预览
型号: V436616Y24VATG-75
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3伏16M ×64的高性能133 MHz的SDRAM SODIMM UNBUFFERED [3.3 VOLT 16M x 64 HIGH PERFORMANCE 133 MHZ SDRAM UNBUFFERED SODIMM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 12 页 / 238 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V436616Y24VATG-75  
Serial Presence Detect Information  
2
A serial presence detect storage device -  
written into the E PROM device during module pro-  
2
2
E PROM - is assembled onto the module. Informa-  
duction using a serial presence detect protocol (I C  
tion about the module configuration, speed, etc. is  
synchronous 2-wire bus)  
SPD-Table for 75 modules:  
Hex Value  
Byte Number Function Described  
SPD Entry Value  
16Mx64  
80  
0
1
Number of SPD bytes  
128  
Total bytes in Serial PD  
256  
08  
2
Memory Type  
SDRAM  
04  
3
Number of Row Addresses (without BS bits)  
Number of Column Addresses (for x16 SDRAM)  
Number of DIMM Banks  
13  
0D  
09  
4
9
5
1
01  
6
Module Data Width  
64  
40  
7
Module Data Width (continued)  
Module Interface Levels  
0
LVTTL  
00  
8
01  
9
SDRAM Cycle Time at CL=3  
SDRAM Access Time from Clock at CL=3  
Dimm Config (Error Det/Corr.)  
Refresh Rate/Type  
7.5 ns  
75  
10  
11  
12  
13  
14  
15  
5.4 ns  
54  
none  
00  
Self-Refresh,7.8 µs  
x16  
82  
SDRAM width, Primary  
10  
Error Checking SDRAM Data Width  
n/a / x16  
00  
Minimum Clock Delay from Back to Back Random  
Column Address  
t
ccd = 1 CLK  
01  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
Burst Length Supported  
1, 2, 4, 8  
4
0F  
04  
06  
01  
01  
00  
0E  
A0  
54  
00  
00  
14  
0F  
14  
2D  
Number of SDRAM Banks  
Supported CAS Latencies  
CL =2, 3  
CS Latencies  
CS Latency = 0  
WL = 0  
WE Latencies  
SDRAM DIMM Module Attributes  
SDRAM Device Attributes: General  
Minimum Clock Cycle Time at CAS Latency = 2  
Maximum Data Access Time from Clock for CL = 2  
Minimum Clock Cycle Time at CL = 1  
Maximum Data Access Time from Clock at CL = 1  
Minimum Row Precharge Time  
Minimum Row Active to Row Active Delay tRRD  
Minimum RAS to CAS Delay tRCD  
Minimum RAS Pulse Width tRAS  
Non Buffered/Non Reg.  
Vcc tol ± 10%  
10. 0 ns  
5.4 ns  
Not Supported  
Not Supported  
20 ns  
15 ns  
20 ns  
45 ns  
V436616Y24VATG-75 Rev. 1.3 October 2001  
4