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V29C51004B 参数 Datasheet PDF下载

V29C51004B图片预览
型号: V29C51004B
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位524,288 ×8位的5伏CMOS FLASH MEMORY [4 MEGABIT 524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 15 页 / 70 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MO SEL VITELIC  
V29C51004T/V29C51004B  
Table 2. Command Codes  
First Bus  
Program Cycle  
Second Bus  
Program Cycle  
Third Bus  
Program Cycle  
Fourth Bus  
Program Cycle  
Fifth Bus  
Program Cycle  
Six Bus  
Program Cycle  
Command  
Sequence  
Address Data Address Data Address Data Address Data  
Address Data Address Data  
Read  
Read  
XXXXH  
5555H  
5555H  
F0H  
AAH 2AAAH  
AAH 2AAAH  
55H  
55H  
5555H  
5555H  
F0H RA(1)  
RD(2)  
See table 3 for detail.  
Autoselect  
Mode  
90H  
Byte  
5555H  
5555H  
AAH 2AAAH  
55H  
5555H  
A0H PA  
PD(4)  
Program  
Chip Erase  
AAH 2AAAH  
AAH 2AAAH  
55H  
55H  
5555H  
5555H  
80H  
80H  
5555H  
5555H  
AAH  
AAH  
2AAAH  
2AAAH  
55H  
55H  
5555H  
SA(5)  
10H  
30H  
Sector Erase 5555H  
NOTES:  
1. RA: Read Address  
2. RD: Read Data  
3. PA: The address of the memory location to be programmed.  
4. PD: The data at the byte address to be programmed.  
5. SA(5): Sector Address  
written. While in the internal erase mode, the  
device ignores any program attempt into the  
device. The internal erase completion can be  
determined via DATA polling or toggle bit status.  
The V29C51004T/V29C51004B is shipped fully  
erased (all bits = 1).  
Toggle Bit (I/O )  
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The V29C51004T/V29C51004B also features  
another method for determining the end of a  
program cycle. When the device is in the program  
cycle, any attempt to read the device will result in  
l/O toggling between 1 and 0. Once the program is  
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completed, the toggling will stop. The device is then  
ready for the next operation. Examining the toggle  
bit may begin at any time during a program cycle.  
Chip Erase Cycle  
The V29C51004T/V29C51004B features a chip-  
erase operation. The chip erase operation is  
initiated by using a specific six-bus-cycle  
sequence: two unlock program cycles, a setup  
command, two additional unlock program cycles,  
and the chip erase command (see Table 2).  
The automatic erase begins on the rising edge of  
the last WE or CE pulse in the command sequence  
and terminates when the data on DQ7 is 1.  
Boot Block Protection Enabling/Disabling  
The V29C51004T/V29C51004B features  
hardware Boot Block Protection. The boot block  
sector protection is enabled when high voltage  
(12.5V) is applied to OE and A9 pins with CE pin  
LOW and WE pin LOW. The sector protection is  
disabled when high voltage is applied to OE, CE  
and A9 pins with WE pin LOW. Other pins can be  
HIGH or LOW. This is shown in table 1.  
Program Cycle Status Detection  
There are two methods for determining the state  
of the V29C51004T/V29C51004B during a  
Autoselect Mode  
program (erase/write) cycle: DATA Polling (I/O )  
The V29C51004T/V29C51004B features an  
Autoselect mode to identify boot block locking  
status, device ID and manufacturer ID.  
Entering Autoselect mode is accomplished by  
applying a high voltage (VH) to the A9 Pin, or  
through a sequence of commands (as shown in  
table 2). Device will exit this mode once high  
voltage on A9 is removed or another command is  
loaded into the device.  
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and Toggle Bit (I/O ).  
6
DATA Polling (I/O )  
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The V29C51004T/V29C51004B features DATA  
polling to indicate the end of a program cycle.  
When the device is in the program cycle, any  
attempt to read the device will received the  
complement of the loaded data on I/O . Once the  
program cycle is completed, I/O will show true  
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data, and the device is then ready for the next  
cycle.  
V29C51004T/V29C51004B Rev. 1.5 October 2000  
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