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V29C51001T-70P 参数 Datasheet PDF下载

V29C51001T-70P图片预览
型号: V29C51001T-70P
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位131,072 ×8位的5伏CMOS FLASH MEMORY [1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 16 页 / 77 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MO SEL VITELIC  
V29C51001T/V29C51001B  
Table 2. Command Codes  
First Bus  
Program Cycle  
Second Bus  
Program Cycle  
Third Bus  
Program Cycle  
Fourth Bus  
Program Cycle  
Fifth Bus  
Program Cycle  
Six Bus  
Program Cycle  
Command  
Sequence  
Address Data Address Data Address Data Address Data  
Address Data Address Data  
Read  
XXXXH  
5555H  
5555H  
F0H  
Read  
AAH 2AAAH  
AAH 2AAAH  
55H  
55H  
5555H  
5555H  
F0H RA  
RD  
Autoselect  
90H  
00H  
01H  
40H  
01H  
(1)  
(2)  
A1H  
Byte  
5555H  
5555H  
AAH 2AAAH  
55H  
5555H  
A0H PA  
PD(4)  
Program  
Chip Erase  
AAH 2AAAH  
AAH 2AAAH  
55H  
55H  
5555H  
5555H  
80H  
80H  
5555H  
5555H  
AAH  
AAH  
2AAAH  
2AAAH  
55H  
55H  
5555H  
PA(3)  
10H  
30H  
Sector Erase 5555H  
NOTES:  
1. Top Boot Sector  
2. Bottom Boot Sector  
3. PA: The address of the memory location to be programmed.  
4. PD: The data at the byte address to be programmed.  
The automatic erase begins on the rising edge of  
the last WE or CE pulse in the command sequence  
and terminates when the data on DQ7 is 1.  
Sector Erase Cycle  
The V29C51001T/V29C51001B features a  
sector erase operation which allows each sector to  
be erased and reprogrammed without affecting  
data stored in other sectors. Sector erase operation  
is initiated by using a specific six-bus-cycle  
sequence: Two unlock program cycles, a setup  
command, two additional unlock program cycles,  
and the sector erase command (see Table 2). A  
sector must be first erased before it can be  
reprogrammed. While in the internal erase mode,  
the device ignores any program attempt into the  
device. The internal erase completion can be  
determined via DATA polling or toggle bit.  
Program Cycle Status Detection  
There are two methods for determining the state  
of the V29C51001T/V29C51001B during a  
program (erase/program) cycle: DATA Polling  
(I/O ) and Toggle Bit (I/O ).  
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DATA Polling (I/O )  
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The V29C51001T/V29C51001B features DATA  
polling to indicate the end of a program cycle.  
When the device is in the program cycle, any  
attempt to read the device will received the  
The V29C51001T/V29C51001B is shipped with  
pre-erased sectors (all bits = 1).  
complement of the loaded data on I/O . Once the  
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program cycle is completed, I/O will show true  
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data, and the device is then ready for the next  
cycle.  
Chip Erase Cycle  
The V29C51001T/V29C51001B features a chip-  
erase operation. The chip erase operation is  
initiated by using a specific six-bus-cycle  
sequence: two unlock program cycles, a setup  
command, two additional unlock program cycles,  
and the chip erase command (see Table 2).  
The chip erase operation is performed  
sequentially, one sector at a time. When the  
automated on chip erase algorithm is requested  
with the chip erase command sequence, the device  
automatically programs and verifies the entire  
memory array for an all zero pattern prior to erasure  
Toggle Bit (I/O )  
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The V29C51001T/V29C51001B also features  
another method for determining the end of a  
program cycle. When the device is in the program  
cycle, any attempt to read the device will result in  
l/O toggling between 1 and 0. Once the program is  
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completed, the toggling will stop. The device is then  
ready for the next operation. Examining the toggle  
bit may begin at any time during a program cycle.  
V29C51001T/V29C51001B Rev. 0.8 October 2000  
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