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V29C51001B-90J 参数 Datasheet PDF下载

V29C51001B-90J图片预览
型号: V29C51001B-90J
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位131,072 ×8位的5伏CMOS FLASH MEMORY [1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY]
分类和应用: 内存集成电路
文件页数/大小: 16 页 / 77 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MO SEL VITELIC  
V29C51001T/V29C51001B  
(1)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Commercial  
Unit  
V
V
Input Voltage (input or I/O pins)  
-2 to +7  
-2 to +13  
IN  
IN  
V
Input Voltage (A pin, OE)  
V
9
V
Power Supply Voltage  
-0.5 to +5.5  
-65 to +125  
0 to +70  
V
CC  
T
Storage Temperature (Plastic)  
Operating Temperature  
°C  
°C  
mA  
STG  
OPR  
OUT  
T
(2)  
I
Short Circuit Current  
200 (Max.)  
NOTE:  
1. Stress greater than those listed unders Absolute Maximum Ratingsmay cause permanent damage to the device. This is a stress  
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections  
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
2. No more than one output maybe shorted at a time and not exceeding one second long.  
DC Electrical Characteristics  
(over the commercial operating range)  
Parameter  
Name  
Parameter  
Test Conditions  
Min.  
Max.  
0.8  
Unit  
V
V
V
Input LOW Voltage  
Input HIGH Voltage  
Input Leakage Current  
Output Leakage Current  
Output LOW Voltage  
Output HIGH Voltage  
Read Current  
V
V
V
V
V
V
= V Min.  
CC  
IL  
CC  
= V Max.  
2
V
IH  
CC  
CC  
I
I
= GND to V , V = V Max.  
±1  
µA  
µA  
V
IL  
OL  
IN  
CC  
CC  
CC  
= GND to V , V = V Max.  
±1  
OUT  
CC  
CC  
CC  
V
V
= V Min., I = 2.1mA  
0.4  
OL  
OH  
CC  
CC  
CC  
OL  
= V Min, I = -400µA  
2.4  
V
CC  
OH  
I
CE = OE = V , WE = V , all I/Os open,  
40  
mA  
CC1  
IL  
IH  
Address input = V /V , at f = 1/t Min.,  
IL IH  
RC  
V
= V Max.  
CC  
CC  
I
I
I
Program Current  
CE = WE = VIL, OE = V , V = V Max.  
50  
2
mA  
mA  
µA  
V
CC2  
SB  
IH  
CC  
CC  
TTL Standby Current  
CMOS Standby Current  
CE = OE = WE = V , V = V Max.  
IH CC CC  
CE = OE = WE = V 0.3V, V = V Max.  
150  
12.5  
50  
SB1  
CC  
CC  
CC  
V
Device ID Voltage for A  
CE = OE = V , WE = V  
IH  
11.5  
H
9
9
IL  
I
Device ID Current for A  
CE = OE = V , WE = V , A9 = V Max.  
µA  
H
IL  
IH  
H
V29C51001T/V29C51001B Rev. 0.8 October 2000  
4