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MS62256H-15NC 参数 Datasheet PDF下载

MS62256H-15NC图片预览
型号: MS62256H-15NC
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8高速CMOS静态RAM [32K x 8 HIGH SPEED CMOS STATIC RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 109 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL-VITELIC
Switching Waveforms (Write Cycle)
WRITE CYCLE 2
(1,6)
MS62256H
NOTES:
1. W must be high during address transitions.
2. The internal write time of the memory is defined by the overlap E active and W low. Both signals must be active to initiate and
any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second
transition edge of the signal that terminates the write.
3. T
WR
is measured from the earlier of E or W going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied.
5. If the E low transition occurs simultaneously with the W low transitions or after the W low transition, outputs remain in a high
impedance state.
6. G is continuously low (G = V
IL
).
7. D
OUT
is the same phase of write data of this write cycle.
8. D
OUT
is the read data of next address.
9. If E is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must
not be applied to them.
10. Transition is measured ±500mV from steady state with C
L
= 5pF as shown in Figure 1b on page 4. This parameter is guaran-
teed and not 100% tested.
11. t
CW
is measured from E going low to the end of write.