ISSUE 1.5 : April 2001
SYS88000RKX-85/10/12
Absolute Maximum Ratings (1)
Parameter
Symbol
Min
Typ
Max
Unit
Voltage on any pin relative to VSS
Power Dissipation
VT
-0.3
-
-
1.0
-
7.0
-
V
PT
W
oC
Storage Temperature
TSTG
-55
125
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at those or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
VIH
VIL
TA
4.5
2.2
-0.3
0
5.0
5.5
VCC+0.3
0.8
V
V
Input High Voltage
Input Low Voltage
Operating Temperature (Commercial)
(Industrial)
-
-
-
-
V
70
oC
oC
TAI
-40
85
DC Electrical Characteristics (VCC=5V±10%)
TA 0 to 70 oC
Parameter
Symbol Test Condition
Min Typ max Unit
I/P Leakage Current
Output Leakage Current
Operating Current
Address,OE,WE ILI
0V < VIN < VCC
CS = VIH, VI/O = GND to VCC
ICC1 Min. Cycle, CS = VIL,VIL<VIN<VIH
-16
-
-
-
-
-
-
-
-
16
16
µA
µA
ILO
-16
-
170 mA
Standby Supply Current
TTLlevels ISB1
CMOSlevels ISB2
-L Version (CMOS) ISB3
CS = VIH
-
48
32
2
mA
mA
mA
V
CS > VCC-0.2V, 0.2<VIN<VCC-0.2V
CS > VCC-0.2V, 0.2<VIN<VCC-0.2V
-
-
Output Voltage
VOL IOL = 8.0mA
VOH IOH = -4.0mA
-
0.4
-
2.4
V
Typical values are at VCC=5.0V,TA=25oC and specified loading.
Add 800mA to -L CMOS standby currents to obtain industrial temp range parameters.
Capacitance (VCC=5V±10%,TA=25oC)
Note: Capacitance calculated, not measured.
Parameter
Symbol Test Condition
max
Unit
Input Capacitance (Address,OE,WE)
I/P Capacitance (other)
I/O Capacitance
CIN1 VIN = 0V
CIN2 VIN = 0V
CI/O VI/O = 0V
128
10
pF
pF
pF
160
2