4M x 8 SRAM MODULE
SYS84000RKX - 85/10/12
Issue 1.7 : April 2001
Description
Features
The SYS84000RKX is a plastic 32Mbit Static RAM
Module housed in a standard 38 pin Single In-Line
package organised as 4M x 8 with access times of,
85,100, or 120 ns.
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Access Times of 85/100/120 ns.
Low Power Disipation:
Operating
770 mW (Max.)
Standby-L Version (CMOS) 4.84mW (Max.)
5 Volt Supply ± 10%.
The module is constructed using eight 512Kx8 SRAMs
in TSOPII packages mounted onto both sides of an FR4
epoxy substrate. This offers an extremely high PCB
packing density.
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Completely Static Operation.
Equal Access and Cycle Times.
Low Voltage VCC Data Retention.
On-board Decoding & Capacitors.
38 Pin Single-In-Line package (SIP).
Upgrade path to SYS88000RKX (64Mbits).
Thedeviceisofferedinstandardandlowpowerversions,
with the -L module having a low voltage data retention
mode for battery backed applications. Buffering is
providedonthemoduletoreducethe outputcapacitance
to 8pF(Typ).
Note: CS and OE on the module, should be used
with care to avoid on and off board bus contention.
Pin Definition
Block Diagram
NC
A20
Vcc
WE
D2
1
2
3
4
5
D3
6
OE
D0
7
A1
A2
A3
A4
GND
D5
A10
A11
A5
A13
A14
A19
CS
A15
A16
A12
A18
A6
D1
GND
A0
A7
8
9
WE
512K x 8
A0 - A18
SRAM
CS
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
CS
CS
T/R
CS
Q0~3
DECODER
Q4~7
A19
A20
A21
D0 - D7
D0 - D7
/8
OE
CS
CS
CS
CS
512K x 8
SRAM
CS
A8
A9
D7
D4
D6
A17
Vcc
OE
A21
Pin Functions
Address Inputs
Data Input/Output
Chip Select
A0 - A21
D0 - D7
CS
Package Details
Write Enable
Output Enable
No Connect
WE
OE
Plastic 38 pin Single-In-Line (SIP)
NC
Power (+5V)
Ground
VCC
GND