MSM8512 - 020/025/35
ISSUE 1.0 : January 1999
Low V
cc
Data Retention Characteristics - L Version Only
(T
A
=-55°C to +125
o
C)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention
Operation Recovery Time
Symbol Test Condition
V
DR
I
CCDR
t
CDR
t
R
CS
≥
V
CC
-0.2V
V
CC
=3.0V, CS
≥
V
CC
-0.2V,
See Retention Waveform
See Retention Waveform
min
2.0
-
0
5
typ
-
-
-
-
max
5.5
8
-
-
Unit
V
mA
ns
ms
AC OPERATING CONDITIONS
Read Cycle
Parameter
Symbol
t
RC
t
AA
t
ACS
t
OE
t
OH
t
CLZ
t
OLZ
t
CHZ
t
OHZ
20
min max
20
-
-
-
5
5
0
-
0
-
20
20
10
-
-
-
10
10
25
min max
25
-
-
-
5
5
0
0
0
-
25
25
15
-
-
-
10
10
35
min max
35
-
-
-
5
5
0
0
0
-
35
35
15
-
-
-
10
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Output Hold from Address Change
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
(3)
Output Disable to Output in High Z
(3)
Write Cycle
20
Parameter
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
25
max
-
-
-
-
-
-
10
-
-
-
35
max
-
-
-
-
-
-
10
-
-
-
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
min
20
15
15
0
15
0
0
10
0
5
min
25
15
15
0
15
0
0
10
0
5
min
35
15
15
0
15
0
0
10
0
5
max
-
-
-
-
-
-
10
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
MOSAIC [ MOSAIC ]
